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Wafer processing method

A chip processing, chip technology, applied in the direction of stone processing equipment, laser welding equipment, electrical components, etc., can solve uneconomical problems

Active Publication Date: 2010-01-13
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the process from casting semiconductor ingots to manufacturing devices, since most of the semiconductors are discarded, there is an extremely uneconomical problem.

Method used

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Examples

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Embodiment Construction

[0021] figure 1 The shown laser processing apparatus 1 is an apparatus capable of processing a wafer by irradiating laser light to form a degenerated layer inside it, and the laser processing apparatus 1 includes: a chuck table 2 that holds a wafer as an object to be processed and a laser irradiation member 3 for irradiating the workpiece held on the chuck table 2 with laser light for processing.

[0022] The chuck table 2 is subjected to machining feeding in the X-axis direction by the machining feeding member 4 . The processing feed member 4 is a member for processing the chuck table 2 and the laser irradiation member 3 in the direction of the X-axis, and the processing feed member 4 includes a ball screw 40 arranged on the X-axis. direction; a pair of guide rails 41, which are arranged in parallel with the ball screw 40; a motor 42, which is connected to one end of the ball screw 40; a moving plate 43, whose inner nut is screwed with the ball screw 40, and the The lower p...

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PUM

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Abstract

A wafer treating method includes the steps of irradiating a wafer, provided with devices on the face side, from the back side with a laser beam capable of being transmitted through the wafer, while converging the laser beam to a predetermined depth, so as to form a denatured layer between the face side and the back side of the wafer, and separating the wafer into a back-side wafer on the back side relative to the denatured layer and a face-side wafer on the face side relative to the denatured layer. The denatured layer remaining in the face-side wafer is removed, and the face-side wafer is finished to a predetermined thickness, whereby the devices constituting the face-side wafer are finished into products, and the back-side wafer is recycled.

Description

technical field [0001] The present invention relates to a wafer processing method for separating a wafer into a back-side wafer and a front-side wafer by irradiating a laser beam to form a degenerated layer inside the wafer. Background technique [0002] For devices such as IC (Integrated Circuit: Integrated Circuit) and LSI (Large Scale Integrated Circuit: Large Scale Integrated Circuit) used in various electronic devices, semiconductor ingots such as silicon ingots are sliced ​​to form substrates The above-mentioned device is formed by grinding both surfaces of the wafer and performing mirror processing by polishing (polishing), and forming a circuit on the mirror-processed wafer surface (for example, refer to Patent Documents 1 and 2) . [0003] Patent Document 1: Japanese Patent Laid-Open No. 2006-100786 [0004] Patent Document 2: Japanese Patent Laid-Open No. 2005-317846 [0005] However, since most of the semiconductor is discarded in the process from casting the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78H01L21/268H01L21/302B28D5/00B23K26/00B23K26/38B23K26/40H01L21/304
CPCB23K26/0057H01L21/268B23K26/0853H01L21/78B23K26/4075B23K2201/40B23K26/40B23K26/53B23K2101/40B23K2103/50H01L21/302
Inventor 关家一马
Owner DISCO CORP
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