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Encapsulated metal resistor

A technology of metal film resistors and intermetallic dielectrics, applied in the field of metal resistors and metal resistors, can solve problems that are not always feasible

Active Publication Date: 2011-09-07
ANALOG DEVICES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this is not always a feasible solution as many applications require the use of metal films as interlayers

Method used

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  • Encapsulated metal resistor
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Embodiment Construction

[0022] Referring now to the provided for explanatory purposes image 3 to 6 to explain the teaching of the present invention. The following description is not intended to limit the invention in any way, except as may be deemed necessary in accordance with the appended claims.

[0023] Such as image 3 As shown, a multilayer semiconductor structure 300 according to the teachings of the present invention includes a plurality of layers 305 or levels. for already referenced figure 1 Components that have already been described use the same reference numerals. Certain layers are used for different purposes, such as conductive layers or insulating layers, as will be understood by those skilled in the art. In the context of the present invention, as part of the fabrication process of the multilayer structure, a resistive layer 110 formed of a bulk material 115 bounded in both the upper and lower directions by surfaces 115a, 115b is formed within the structure. middle layer. The ...

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Abstract

The method provides a semiconductor structure and method for forming such a structure that provides for protection for resistive layers formed within the structure from contamination from adjacent layers. By encapsulating the resistive layer in a material that is resistant to the diffusion of contaminants it is possible to protect the resistive material during the processing required to manufacture the structure.

Description

technical field [0001] This invention relates to semiconductor fabrication techniques, and in particular to the fabrication of metal resistors for use in integrated circuits. The present invention more particularly relates to metal resistors arranged in a sandwich arrangement, wherein outer layers serve to protect the resistor. Background technique [0002] In many situations in integrated circuit (IC) processing, resistors of different values ​​are required for various circuit functions. In particular, temperature measurement requires resistors with relatively high temperature coefficient of resistance (TCR) and low noise. Although metal films do not have the highest TCR, they have very low intrinsic noise, making them advantageous for use in measurements with small temperature variations. A specific application is the detection of infrared radiation using microelectromechanical (MEMS) type structures and bolometric or calorimetric measurements using MEMS type structures....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522
CPCH01L23/5228H01L2924/3011H01L2924/0002H01L2924/00
Inventor 伯纳德·P·斯滕松埃蒙·海因斯威廉·莱恩
Owner ANALOG DEVICES INC