Method for measuring collector area intrinsic square resistance of bipolar transistor

A technology of bipolar transistors and square resistances, which is applied in measuring devices, measuring electrical variables, measuring resistance/reactance/impedance, etc., and can solve problems that cannot truly reflect the resistance of bipolar transistors

Inactive Publication Date: 2010-03-10
GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In this measurement structure, only the resistance is used to fit, and it cannot really

Method used

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  • Method for measuring collector area intrinsic square resistance of bipolar transistor
  • Method for measuring collector area intrinsic square resistance of bipolar transistor
  • Method for measuring collector area intrinsic square resistance of bipolar transistor

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Embodiment Construction

[0019] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0020] Figure 3a , Figure 3b Shown are respectively a plan view and a cross-sectional view of a measurement structure for measuring the collector region resistance of a SiGe bipolar transistor in a preferred embodiment of the present invention to extract the intrinsic square resistance and extrinsic resistance of the collector region.

[0021] Different from the prior art which only measures the resistance of the collector region of the bipolar transistor in static state, this embodiment is used to measure the resistance of the collector region of the bipolar transistor in working state.

[0022] Figure 3a The bipolar transistor shown includes an emitter region E, a base region B, and a collector region C, wherein the emitter region E includes an emitter metal lead e, the base region B include...

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Abstract

The invention provides a method for measuring collector area intrinsic square resistance of a bipolar transistor. The bipolar transistor comprises a launch area, a base area and a collector area; wherein the launch area comprises the launch area metal primer, the base area comprises the base area metal primer, and the collector area comprises two collector area metal primers. When measuring, keeping zero voltage bias by the launch area, applying a first voltage Vbe to the base area; respectively applying a second voltage Vce+DeltaV and a third voltage Vce-DeltaV to the two collector metal primers of the the collector area, and measuring the electric current I which passes through the collector area; repeating the step a and the step b at a plurality of bipolar transistors of the collectorarea with the same length LC and the different widths Wc; according to the values of the length LC, the width Wc and the electric current I of the collector area, based on a formula 2DeltaV/DeltaI=Rsh*Lc/DeltaWc+Rx, fitting a curve by taking Lc/DeltaWc as horizontal ordinate and 2DeltaV/DeltaI as longitudinal coordinate, wherein the gradient of the curve is the collector area intrinsic square resistance Rsh, and the intercept distance is the extrinsic resistance Rx of the collector area.

Description

technical field [0001] The invention relates to a measuring structure and a measuring method for measuring resistance, and more particularly relates to a measuring method for measuring the square resistance of a collector area of ​​a bipolar transistor. Background technique [0002] The known measurement structure of collector area sheet resistance of bipolar transistor is as follows: figure 1 As shown, the measurement structure is the diffusion resistance at both ends with the same process conditions as the collector area. Design and measure resistors with different length L and width W, apply a voltage V across the resistor, and measure the current I flowing through the resistor. Since the resistance R in this path includes the intrinsic square resistance Rcc and the extrinsic resistance Rcx of the collector region, it can be fitted by the formula R=V / I=Rcc*L / W+Rcx as figure 2 In the curve shown, the ordinate is R, the abscissa is L / W, the slope is the intrinsic square ...

Claims

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Application Information

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IPC IPC(8): G01R27/08
Inventor 王兵冰
Owner GRACE SEMICON MFG CORP
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