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Contact of semiconductor device and manufacturing method thereof

A semiconductor and contact hole technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as noise inflow, and achieve the effect of preventing negative effects

Inactive Publication Date: 2010-03-17
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the contact plug may absorb various electromagnetic waves from the outside, causing noise to flow into the wiring connected to the contact plug

Method used

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  • Contact of semiconductor device and manufacturing method thereof
  • Contact of semiconductor device and manufacturing method thereof
  • Contact of semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Exemplary Figure 1A is a cross-sectional view of a contact of a semiconductor device according to an embodiment, exemplary Figure 1B is along the exemplary Figure 1A A top view of the contacts of the semiconductor device cut in line I-I.

[0020] as exemplary Figure 1A and Figure 1B As shown, the contact 100 of the semiconductor device may include: a base insulating layer 110, a lower wiring 120 formed on the base insulating layer 110, a lower insulating layer 130 formed on the lower wiring 120, and a ground wiring 140 formed on the lower insulating layer 130. , the intermediate insulating layer 150 formed above the ground wiring 140, the contact plug 160 formed through the intermediate insulating layer 150, the conductive pipe 170 connected to the ground wiring 140 through the intermediate insulating layer 150 while being coaxial with the contact plug 160, formed in An upper insulating layer 180 over the intermediate insulating layer 150 , and an upper wiring 190...

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PUM

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Abstract

The invention discloses a contact of a semiconductor device and a manufacturing method thereof. The contact prevents generation or inlet of noise through a contact plug which connects wires in different layers. The contact includes a lower wire, an insulating layer covering the lower wire, a contact plug connected to the lower wire through the insulating layer, a conductive tube encircling the contact plug and having the insulating layer in between, and an upper wire connected to the contact plug.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2008-0089839 filed on Sep. 11, 2008, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a contact in a semiconductor and a manufacturing method thereof, and more particularly to a contact in a semiconductor device for preventing noise from being generated and influx through a contact plug and a corresponding manufacturing method thereof. Background technique [0004] Typically, semiconductor devices are fabricated through several different processes such as oxidation, etching, and ion implantation. In order to connect a plurality of semiconductor layers produced by different processes, contact holes and contact plugs may be formed. [0005] The contact holes may be formed by a photolithography process. The photolithography process may be performed by optically exposing and d...

Claims

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Application Information

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IPC IPC(8): H01L23/528H01L21/768
CPCH01L2924/0002H01L23/5226H01L21/76802H01L21/76895H01L23/5225Y10T29/49155H01L21/28
Inventor 金明洙
Owner DONGBU HITEK CO LTD