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Two-way blocking-up type surge protection device

A technology of surge protection devices and resistors, which is applied in the direction of automatic disconnection emergency protection devices, emergency protection circuit devices, and protection against overvoltages, etc., which can solve the problems of inability to give the system security, repair of damaged equipment, and reduction in productivity, etc. problems, to achieve the effect of easy protection design, improved performance, and low unit cost

Active Publication Date: 2010-05-05
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, due to many problems in parallel protection, the current surge protection technology still cannot give sufficient safety guarantees for such systems
The result is costly companies in lost productivity and repairs to damaged equipment

Method used

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  • Two-way blocking-up type surge protection device
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  • Two-way blocking-up type surge protection device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] see figure 1 As shown in the schematic diagram of the circuit structure of Embodiment 1 of the present invention, a bidirectional blocking surge protection device 10 is composed of a first depletion type field effect transistor Q1 (a depletion type N-channel metal oxide semiconductor field effect transistor NMOSFET), the second depletion type field effect transistor Q2 (depletion type N-channel metal oxide semiconductor field effect transistor NMOSFET), the third depletion type field effect transistor Q3 (depletion type P-channel junction field effect transistor PJFET) and a variable resistor circuit module composed of the first resistor R1 (constant current source resistor) and the second resistor R2 (constant current source resistor).

[0042] The connection relationship of each device inside the surge protection device 10 (BSP) is described as follows: the source S of the first depletion type field effect transistor Q1 of the bidirectional blocking type surge protect...

Embodiment 2

[0048] see figure 2 As shown in the schematic diagram of the circuit structure of Embodiment 2 of the present invention, as an improvement on the surge protection device of Embodiment 1, a third resistor R3 (bias resistor) is added to the surge protection device 20, and the third resistor R3 is connected in parallel Between the source S and the drain D of the third depletion-type field effect transistor Q3, that is, the third resistor R3 is connected to the source S of the first depletion-type N-channel field-effect transistor Q1 and the second depletion-type N-channel The source S of the field effect transistor Q2.

[0049] The third resistor R3 is the source S of the first depletion type field effect transistor Q1 or the second depletion type field effect transistor after any one of the first and second depletion type field effect transistors Q1 and Q2 is turned off The source S of Q2 provides a stable potential, preventing this node from floating in the "blocking" state o...

Embodiment 3

[0051] see image 3 As shown in the schematic diagram of the circuit structure of Embodiment 3 of the present invention, as an improvement on the surge protection device of Embodiment 1, the surge protection device 30 adds a first feedback voltage divider R and a second feedback voltage divider R ', the first feedback voltage divider R is composed of the fourth resistor R4 and the fifth resistor R5, the fourth resistor R4 and the fifth resistor R5 of the first feedback voltage divider R are connected in parallel to the third depletion type field effect transistor Q3 Between the drain D and the source S, the middle node of the first feedback voltage divider R is connected to the gate G of the first depletion type field effect transistor Q1; the second feedback voltage divider R' is connected by the sixth resistor R6 and the seventh resistor R7, the second feedback voltage divider R' is connected in parallel between the drain D and the source S of the third depletion-type field ...

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Abstract

The invention relates to a novel two-way blocking-up type surge protection device which is composed of dependent mode field effect transistors and resistors; the source electrodes of the first dependent mode field effect transistor and the second dependent mode field effect transistor are respectively connected with the source electrode and the drain electrode of the third dependent mode field effect transistor in series; the drain electrode of the first dependent mode field effect transistor is connected with the input end of a module, the grid electrode of the first dependent mode field effect transistor is connected with the source electrode of the second dependent mode field effect transistor; the drain electrode of the second dependent mode field effect transistor is connected with the input end of the module, the grid electrode of the second dependent mode field effect transistor is connected with the source electrode of the first dependent mode field effect transistor; the grid electrode of the third dependent mode field effect transistor is connected with the first resistor and the second resistor; the other end of the first resistor is connected with the input end of the module, and the other end of the second resistor is connected with the output end of the module. The invention forms a similar variable resistor circuit with resettable fuse wires, which can repeat blocking reset limitlessly; the two-way blocking-up type surge protection device also can realize blocking-up of surge forwards and backwards, thus improving performance of blocking-up type surge protection device.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to the field of semiconductor surge protection devices, and is a bidirectional blocking surge protection device. Background technique [0002] Power surge or transient overvoltage is defined as a voltage that significantly exceeds the design value in an electronic circuit. It mainly includes lightning strikes, power line laps, power line induction, or ground bounce. When the surge is high enough, transient overvoltages can cause serious damage to electronic equipment such as computers and phones. It also results in reduced equipment life. [0003] Transient voltage surge suppressors limit the energy of electrical surges that couple to equipment, thereby protecting electronic equipment from damage. Products in this category include surge protection thyristors, oxide varistors and avalanche diodes. Both types of devices are connected in parallel in the protected circuit, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H3/22H02H3/06
Inventor 苏海伟张关保张婷吴兴农李星
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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