Method for measuring trace metal ion in high-purity metal organic zirconium

Abstract

The invention discloses a method for measuring trace metal ion in high-purity metal organic zirconium, which comprises the steps of: putting compound of high-purity metal organic zirconium into a polytetrafluoroethylene screw opening bottle; putting the bottle on a ultra-clean work table, unscrewing a bottle cover, and performing oxidative decomposition; adding the solution into a microwave digesting apparatus for technical ultra-pure concentrated nitric acid to be digested into transparent and clear acid solution; and preparing 1 part of blank sample under the same condition; diluting the acid solution prepared by the last step with ultra-pure water, and diluting the blank sample under the same condition to be measured; diluting the metal unit standard solution which needs to be measuredwith hydrogen nitrate; correcting a plasma mass spectrometer with the diluted standard solution; respectively putting a parallel sample and a blank sample to be measured into the plasma mass spectrometer to be measured; measuring data Xi of each blank-deducted impurity element; and processing data, wherein Y=1-sigma Xi, and Y is the purity of the high-purity metal organic zirconium. The method isfast and reliable, and has high precision and accuracy.

Description

1. Technical field [0001] The invention relates to the purity analysis of high-purity metal organic zirconium, in particular to the determination of trace metal ions therein. 2. Background technology [0002] In January 2007, with the release of the 45nm process microprocessor, it marked the official arrival of the era of introducing new materials in the CMOS manufacturing process. The newly released microprocessor is the first to use hafnium-based high-K dielectric materials and new gate metal electrode materials to jointly improve the performance of transistors in the processor. This shift marks that the semiconductor industry has begun to use non-core elements in the periodic table, that is, elements other than silicon, oxygen, nitrogen and carbon. It is generally believed that simply relying on proportional reduction is not enough to meet the continuous growth of silicon device performance. Innovation comes from the introduction of new elements in the periodic table, w...

AI Technical Summary

Problems solved by technology

It is generally believed that simply relying on proportional reduction is not enough to meet the continuous growth of silicon device performance