Method for measuring trace metal ion in high-purity metal organic zirconium

A metal-organic and trace metal technology, applied in the direction of measuring devices, preparation of test samples, material analysis by electromagnetic means, etc., can solve the problem of insufficient to meet the continuous growth of the performance of silicon devices, and achieve the improvement of the detection limit of the method , Eliminate the influence of test results and reduce the effect of contamination

Inactive Publication Date: 2010-05-19
NANJING UNIV
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Problems solved by technology

It is generally believed that simply relying on proportional reduction is not enough to meet the continuous growth of silicon device performance

Method used

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Embodiment 1

[0017] (1) Pretreatment of samples:

[0018] Instrument: Microwave Digester

[0019] Since the precursor of the high-K material is a zirconium metal organic compound with a relatively large coordination group, it will decompose in the presence of air and water vapor, so in order to accurately quantify the content of metal ions in it, the sample must be sampled in an oxygen-free and water-free inert glove box , weighing 0.10XX grams, a total of 3 samples were taken as parallel samples, placed on a 100-level ultra-clean workbench in a 10,000-level ultra-clean room, and the cap of the sampling bottle was loosened to allow the sample to slowly oxidize and decompose. After the decomposition was complete, the sample was added Transfer 3mL of technologically ultra-pure concentrated nitric acid to a polytetrafluoroethylene pressure-resistant digestion tank that has been cleaned by ultra-pure, make 3 parallel samples, and make 1 blank under the same conditions, and set appropriate dige...

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Abstract

The invention discloses a method for measuring trace metal ion in high-purity metal organic zirconium, which comprises the steps of: putting compound of high-purity metal organic zirconium into a polytetrafluoroethylene screw opening bottle; putting the bottle on a ultra-clean work table, unscrewing a bottle cover, and performing oxidative decomposition; adding the solution into a microwave digesting apparatus for technical ultra-pure concentrated nitric acid to be digested into transparent and clear acid solution; and preparing 1 part of blank sample under the same condition; diluting the acid solution prepared by the last step with ultra-pure water, and diluting the blank sample under the same condition to be measured; diluting the metal unit standard solution which needs to be measuredwith hydrogen nitrate; correcting a plasma mass spectrometer with the diluted standard solution; respectively putting a parallel sample and a blank sample to be measured into the plasma mass spectrometer to be measured; measuring data Xi of each blank-deducted impurity element; and processing data, wherein Y=1-sigma Xi, and Y is the purity of the high-purity metal organic zirconium. The method isfast and reliable, and has high precision and accuracy.

Description

1. Technical field [0001] The invention relates to the purity analysis of high-purity metal organic zirconium, in particular to the determination of trace metal ions therein. 2. Background technology [0002] In January 2007, with the release of the 45nm process microprocessor, it marked the official arrival of the era of introducing new materials in the CMOS manufacturing process. The newly released microprocessor is the first to use hafnium-based high-K dielectric materials and new gate metal electrode materials to jointly improve the performance of transistors in the processor. This shift marks that the semiconductor industry has begun to use non-core elements in the periodic table, that is, elements other than silicon, oxygen, nitrogen and carbon. It is generally believed that simply relying on proportional reduction is not enough to meet the continuous growth of silicon device performance. Innovation comes from the introduction of new elements in the periodic table, w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/64G01N1/44
Inventor 潘毅虞磊韩建林王晓晨孔令宇曹季
Owner NANJING UNIV
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