Method for manufacturing field effect transistor

Abstract

The invention relates to a manufacturing technology of a field effect transistor, in particular to a method for thinning a substrate of a gallium nitride-based microwave field effect device. Aiming at the defects of a substrate thinning technology in the method for manufacturing the field effect transistor in the prior art, the invention discloses a method for manufacturing the field effect transistor, improves the substrate thinning technology of the field effect transistor so as to adapt to the thinning of a high-hardness substrate material, and improve the quality of a substrate process technology, the quality of the substrate and the overall performance of the device. By using the method for manufacturing the field effect transistor, in the manufacturing technology process of the field effect transistor, a carborundum substrate and other high-hardness substrates of the field effect transistor can be etched to be thinned by plasma. The invention can avoid the break of wafers and improve the quality of thinned substrates and is particularly suitable for a manufacturing technology of gallium nitride-based field effect transistor devices.

Description

technical field [0001] The invention relates to the fabrication technology of a field effect transistor, in particular to a method for thinning the substrate of a gallium nitride-based microwave power field effect device. Background technique [0002] Gallium nitride (GaN), as the third-generation wide-bandgap semiconductor material, has a large bandgap (3.4eV), a high breakdown voltage (3.3MV / cm), and a high two-dimensional electron gas concentration (>10 13 cm 2 ), high velocity of saturated electrons (2.8×10 7 cm / s) and other characteristics have received extensive attention internationally. At present, the high frequency, high voltage, high temperature and high power characteristics of AlGaN / GaN HEMT (Gallium Nitride-based High Electron Mobility Transistor) devices make them have great prospects in microwave power devices. [0003] In the semiconductor field effect transistor structure, the backside thinning process has an important impact on the performance of the...

AI Technical Summary

Problems solved by technology

Usually, the use of physical and mechanical grinding will cause a thickness difference of about 10-20 μm on the 2-inch wafer, resulting in inconsistent thickness of the substrate, and poor consistency of backside brightness and smoothness.

Abrasives contain a lot of dust. For areas with poor brightness and high roughness, it is easy to absorb a large amount of small dust in the abrasive. These small dusts attached to the substrate are difficult to clean, thereby reducing the adhesion between the substrate and the back gold metal. Causes the stability and reliability of the back gold metal to decrease

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