RF MEMES switch and manufacture method thereof
A switch and signal transmission line technology, applied in high capacitance ratio radio frequency micro-electromechanical switch and its manufacturing field, can solve problems such as melting of metal contacts, achieve the effects of reducing contact area, prolonging service life and preventing adhesion
Active Publication Date: 2012-05-23
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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Problems solved by technology
[0007] The technical problem to be solved in the present invention is to solve the problem that the metal contacts will melt due to the arc effect on the moving electrode and the suspended metal after applying the driving voltage by adding a separate driving electrode, so as to achieve the purpose of optimizing the switch performance and prolonging the life of the switch
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[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0020] A kind of RF MEMS switch that the present invention provides, its structure comprises: the substrate 1 with insulating layer 2, usually silicon chip, the signal transmission line 3 and the lower electrode 4 prepared on the insulating layer 2, on the signal transmission line 3 successively deposited The dielectric layer 5 and the suspended metal 6 are anchored and connected to the bridge metal electrode 9 on the lower electrode 4; the bridge metal electrode 9 is arranged opposite to the suspended metal 6 with a gap, and the signal transmission line 3 is located between the two lower electrodes 4; The key point is that a driving electrode 7 covered with a dielectric layer 5 is prepared between the two lower electrodes 4 on the substrate 1 and on both sides of the signal transmission line 3 . The dielectric layer 5 on the driving electrode 7 is distribute...
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The invention discloses an RF MEMES switch and a manufacture method thereof, which are applied to the field of MEMS switches. The RF MEMES switch comprises a substrate, a signal transmission line, lower electrodes, a dielectric layer, suspending metal and a bridge type metal electrode, wherein the substrate is provided with an insulating layer; the signal transmission line and the lower electrodes are formed on the substrate; the dielectric layer and the suspending metal are sequentially deposited on the signal transmission line; the bridge type metal electrode is anchored on and connected to the lower electrodes; the bridge type metal electrode and the suspending metal are opposite to each other, a clearance is reserved between the bridge type metal electrode and the suspending metal, and the signal transmission line is positioned between the two lower electrodes. The RF MEMES switch is characterized in that drive electrodes coated with dielectric layers are arranged between the two lower electrodes on the substrate and both sides of the signal transmission line. The structure prevents the arc effect caused by the direct-current biasing function and solves the problem of invalid switch in a contact point of the suspending metal and the bridge type metal electrode due to melting and adhesion of metal, thereby prolonging the service life of the switch.
Description
technical field [0001] The invention relates to a MEMS element, in particular to a high-capacitance-ratio radio frequency micro-electromechanical switch (RF MEMS Switch) made by MEMS processing technology and a manufacturing method thereof. Background technique [0002] Because MEMS switches have low loss, low power consumption, good isolation, good linearity, miniaturization and high integration, they have better performance than GaAs FET switches or PIN diode switches, and are widely used in wireless communication systems. . [0003] A general RF MEMS switch is mainly composed of a fixed electrode, a moving electrode arranged relative to the fixed electrode, and a dielectric arranged between the moving electrode and the fixed electrode. When a voltage is applied between the moving electrode and the fixed electrode, an electrostatic force is generated between the two so that the moving electrode is attracted to the fixed electrode, changing the distance between the two ele...
Claims
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IPC IPC(8): H01H59/00H01H1/00H01H11/00H01H11/04
Inventor 胥超徐永青
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP