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Gas distribution device and plasma processing device

A gas distribution and gas technology, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of uneven gas distribution and can not guarantee the uniformity of the output gas distribution of the gas distribution plate 2, and achieve uniform gas distribution. Plasma distribution, the effect of improving uniformity

Inactive Publication Date: 2010-07-07
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

As the transmission path becomes longer, the gas pressure passing through each gas distribution hole 7 decreases accordingly, resulting in that the gas flow rate through the gas distribution hole 7 becomes smaller and smaller as the transmission path becomes longer (from the middle to the edge), so that it cannot be guaranteed The distribution uniformity of the output gas of the gas distribution plate 2
[0008] Moreover, if the gas inlet hole 1 is not in the center of the gas distribution plate 2, or the gas distribution plate 2 has a plurality of gas inlet holes in the center and the edge respectively, there will also be the problem of uneven gas distribution under the gas distribution plate 2

Method used

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  • Gas distribution device and plasma processing device
  • Gas distribution device and plasma processing device
  • Gas distribution device and plasma processing device

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Embodiment 1

[0043] image 3 It is a three-dimensional structure diagram of the gas distribution device in this embodiment, Figure 4 for image 3 The cross-sectional view of the A-A direction in the middle, Figure 5 for image 3 Bottom view of the gas distribution unit, Figure 6 It is a schematic diagram of the plasma processing equipment in this embodiment.

[0044] like image 3As shown, the gas distribution device includes: a uniform flow plate 20, gas inlet holes 10 and at least two gas distribution holes 70 respectively located on both sides of the uniform flow plate 20, and a distribution component fixedly connected with the gas distribution holes 70, the distribution The component is in the present embodiment a round tubular distribution pipe 80 .

[0045] The uniform flow plate 20 is a rectangular hollow plate, and the space 21 inside the plate body (see Figure 4 ) to disperse the gas entering the plate body. In other embodiments, the uniform flow plate can also be in ot...

Embodiment 2

[0060] Figure 7 It is a schematic diagram of the gas distribution device in this embodiment.

[0061] The difference between the gas distribution device and the first embodiment is that the two gas inlet holes 10' are respectively located at the edge of the uniform flow plate 20', and the shortest first group of distribution pipes 801' is located at the edge of the uniform flow plate 20' , the longer second group of distribution pipes 802' is located in the middle outward, and the longest third group of distribution pipes 803' is located in the middle of the uniform flow plate 20'.

[0062] Other structures are the same as in Embodiment 1. Similarly, the gas distribution device described in this embodiment adjusts the length of the gas transmission path inside the gas distribution device through each distribution pipe 80' connected to each gas distribution hole 70', so that The gas output end of the gas distribution device is changed from a plane in the prior art to an arc s...

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Abstract

The invention provides a gas distribution device and a plasma processing device. The gas distribution device comprises a flow homogenizing plate, a gas inlet, at least two gas distribution holes, and distribution components, wherein the gas inlet and the at least two gas distribution holes are positioned on two sides of the flow homogenizing plate respectively; the distribution components are fixedly connected with the gas distribution holes, and are provided with gas passages communicated with the gas distribution holes inside; and the lengths of the gas passages of the distribution components are not all the same. The gas distribution device can flexibly regulate the transmission path of the gas in the device, improve the distribution uniformity of the gas above a substrate to be processed, and further improve the distribution uniformity of plasma.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a gas distribution device and plasma processing equipment. Background technique [0002] In the plasma processing equipment, there is usually a gas distribution device, which is used to transport the gas into the process chamber, and excite the plasma under the action of the electric field to perform plasma etching, film deposition, etc. on the substrate in the process chamber. processing. [0003] Whether the gas distribution device can achieve uniform distribution of gas above the substrate will be directly related to the results of the plasma processing process. The thickness uniformity of the formed film is poor, so that the design requirements cannot be met. [0004] figure 1 It is a structural schematic diagram of a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical VaporDeposition, PECVD) equipment, figure 2 for figure 1 The three-dimension...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/513C23F4/00
Inventor 李永军
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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