Capacitor and manufacture method thereof

Abstract

The invention discloses a capacitor and a manufacture method thereof, wherein the capacitor comprises a semiconductor lining, a bus, a grounding wire, a first conductive plug, a second conductive plug, a first interlayer dielectric layer, a first electrode, a grounding cushion layer, a second interlayer dielectric layer, a third conductive plug and a second electrode, wherein the bus and the grounding wire are arranged on the surface opposite to a basement of the semiconductor lining, the first conductive plug penetrates through the semiconductor lining and is connected with the bus, the second conductive plug penetrates through the semiconductor lining and is connected with the grounding wire, the first interlayer dielectric layer is arranged on the basement surface of the semiconductor lining, the first electrode penetrates through the first interlayer dielectric layer and is communicated with the first conductive plug, the grounding cushion layer penetrates through the first interlayer dielectric layer and is communicated with the second conductive plug, the second interlayer dielectric layer is arranged on the first interlayer dielectric layer, the first electrode and the grounding cushion layer, the third conductive plug penetrates through the second interlayer dielectric layer and is connected with the grounding cushion layer, and the second electrode is arranged in the second interlayer dielectric layer and is communicated with the third conductive plug. In the invention, the inductance is lowered and the device quality is enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a capacitor and a manufacturing method thereof. Background technique [0002] In VLSI, capacitor is one of the commonly used passive components. Capacitors are often integrated in active components such as bipolar transistors or complementary metal oxide semiconductor (CMOS, Complementary Metal Oxide Semiconductor) transistors. Capacitors manufactured at present can be divided into two types: polysilicon as the electrode and metal as the electrode. Polysilicon as the electrode has the problem of carrier shortage, so that when the surface voltage across the capacitor changes, the capacitance will also change. Therefore, in Capacitors with polysilicon electrodes cannot meet the linearity requirements required by today's logic circuits. However, capacitors with metal electrodes do not have the above-mentioned problems, and such capacitors with metal electrodes are generally ca...

AI Technical Summary

Problems solved by technology

In the existing technology, the size of the capacitor is relatively small, so that the cross-sectional area of ​​the metal wire connected to the capacitor is correspondingly reduced, and thus it is impossible to manufacture a capacitor with an inductance less than 1 nanohenry and a capacitance greater than 100 picofarads

If capacitors are fabricated on the opposite surface of the semiconductor substrate, due to the large area occupied, on the one hand, the effective area of ​​the device will be wasted, and at the same time, the signal interference between the devices will increase, resulting in a decrease in the quality of the device.

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