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Susceptor for improving throughput and reducing wafer damage

A susceptor and wafer technology, which is applied in the directions of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of long time spent on the susceptor and increased processing time.

Inactive Publication Date: 2012-07-25
MEMC ELECTONIC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Another problem presented by conventional susceptors is that the susceptors take a long time to heat and cool, resulting in increased processing time

Method used

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  • Susceptor for improving throughput and reducing wafer damage
  • Susceptor for improving throughput and reducing wafer damage
  • Susceptor for improving throughput and reducing wafer damage

Examples

Experimental program
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Embodiment Construction

[0024] See now the attached drawings, especially the reference figure 1 , the base is generally represented by a reference number 10 as a whole. Susceptor 10 supports a semiconductor wafer, indicated generally at 12 . Wafer 12 has a front side 14 and a back side 16 opposite the front side. Wafer 12 also has a circumferential side 18 extending around front side 14 and back side 16 . although figure 1 The circumferential sides shown in are generally circular, but the sides could be straight without departing from the scope of the invention.

[0025] The base 10 includes a body, generally indicated at 20 , having a circular shape about an imaginary central axis 22 . Additionally, the body 20 includes an upper surface 24 and a lower surface 26 . A first or outer recess, generally indicated at 30 , extends downwardly from upper surface 24 into body 20 . The first recess 30 includes a generally cylindrical wall 32 and a surface 34 extending inwardly from a lower end of the wal...

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Abstract

A susceptor for supporting a semiconductor wafer in a heated chamber having an interior space. The susceptor includes a body having an upper surface and a lower surface opposite the upper surface. The susceptor also has a recess extending downward from the upper surface into the body along an imaginary central axis. The recess is sized and shaped for receiving the semiconductor wafer therein. Thesusceptor includes a plurality of lift pin openings extending through the body from the recess to the lower surface. Each of the lift pin openings is sized for accepting lift pins to selectively liftand lower the wafer with respect to the recess. The susceptor has a central opening extending through the body along the central axis from the recess to the lower surface.

Description

Background technique [0001] This invention relates to susceptors for use in chemical vapor deposition processes, and more particularly to susceptors for supporting semiconductor single wafers during chemical vapor deposition processes. [0002] A semiconductor wafer may be subjected to a chemical vapor deposition process, such as an epitaxial deposition process, to grow a thin layer of silicon on the front side of the wafer. The process enables direct fabrication of devices on high-quality epitaxial layers. Conventional epitaxial deposition processes are disclosed in US Patent Nos. 5,904,769 and 5,769,942, which are incorporated herein by reference. [0003] Prior to epitaxial deposition, a semiconductor wafer is loaded in a deposition chamber and lowered onto a susceptor. After the wafer is lowered onto the susceptor, the epitaxial deposition process is started by preheating and cleaning the front side of the wafer by directing a cleaning gas such as hydrogen or a mixture o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/68
CPCH01L21/68735C23C16/4583C30B25/12H01L21/68742
Inventor 滨野学S·科穆J·A·皮特尼T·A·托拉克L·G·赫尔维格
Owner MEMC ELECTONIC MATERIALS INC