Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for matching induction amplifier

A technology of sense amplifier and matching method, applied in instruments, static memory, digital memory information, etc., can solve problems such as misjudgment

Active Publication Date: 2013-04-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional method is simply to pre-set the matching coefficient. Since M1 and M2, M3 and M4, M5 and M6 still cannot be completely matched, there will still be defects of misjudgment during detection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for matching induction amplifier
  • Method for matching induction amplifier
  • Method for matching induction amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0010] Aiming at the defect that the above-mentioned inductive amplifiers cannot be well matched, resulting in misjudgment of the detection storage unit, the present invention provides a matching method for enhancing the inductive amplifier, which can adaptively adjust the matching coefficient of the inductive amplifier.

[0011] The specific flow of the enhanced sense amplifier matching method of the present invention is as follows: figure 2 shown. When the induction amplifier starts to work, the fuse processing is first performed to set the matching coefficient X of the induction amplifier (step S101 ), wherein the value range of X is 0.4-1.6. Then input the first current and the second current (step S103), if the sense amplifier is applied to the storage unit in the detection memory to store "0" or "1" bit, then the first current is the output current I of the storage unit cell , the second current is the reference current I ref , the I cell and I ref It can be generat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for matching an induction amplifier, comprising the following steps: inputting a first current and a second current; detecting induction voltage of the induction amplifier; and regulating the matching coefficient of the induction amplifier according to the induction voltage. By adopting the method for matching the induction amplifier, the matching coefficient of the induction amplifier can be regulated according to the induction voltage generated by the input currents, and the effect of obtaining the best matching state of the induction amplifier can be achieved.

Description

technical field [0001] The invention relates to the field of inductive amplifiers, in particular to a matching method for inductive amplifiers. Background technique [0002] Sense amplifiers are often used in semiconductor memories, such as to detect the difference between the bit line current on a memory cell (me memory cell) and the reference current, so as to determine whether the memory cell stores a "0" or "1" bit. Such as figure 1 As shown, the traditional sense amplifier mainly includes MOS transistors M2, M3, M5 and M6. Wherein, M3 matches the storage unit M4, and the output current I on M4 can be cell The output current mirrored to M3, that is, I cell = I m3 ; M2 is matched with the storage unit M1, and the output current I on M1 can be cell The output current mirrored onto M2, that is, I ref = I m2 ; M5 matches the storage unit M6, i.e. I m5 = I m6 . When the sense amplifier is used to test the memory cell M4 storage bit is "0" or "1", due to I cell = I ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/06
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP