Detection circuit and detection device of resistance changing memory

Abstract

The invention discloses a detection circuit and a detection device of a resistance changing memory. The detection circuit is operated as follows: presetting the voltage of a word line as a preset reading voltage, detecting the value of current flowing in the resistance changing memory, reasonably selecting a sampling resistance, and reading data in the memory through comparing the reading voltageand the voltage of the sampling resistance. The detection device comprises a display (1), a controller (2), a voltage generation circuit (4) used for generating a programming voltage, a reading voltage and a protection voltage, a word line selecting switch array (6) which is used for configuring a word line voltage (7) and a reference voltage (19) of a voltage comparator, a bit line selecting switch array (10) which is used for configuring a bit line voltage (9) and a current detection port (11), a self-adaptive AD sampling circuit (13) and the detection circuit (20) which is used for readingdata in the resistance changing memory. With the self-adaptive AD sampling circuit (13), the proper sampling resistance can be obtained, thereby realizing the efficient reading of the data in the resistance changing memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory testing, in particular to a detection circuit of a resistive variable memory and detection equipment with the detection circuit. Background technique [0002] Although FLASH memory is still the mainstream device in the non-volatile semiconductor memory market, with the advancement of microelectronic technology nodes, the FLASH technology based on the traditional floating gate structure is encountering serious technical difficulties, the most important of which is Its scalability with technology generations is hindered. In this situation, the industry and academia have devoted more and more energy to the research and development of the next-generation non-volatile semiconductor memory technology, among which resistance-change memory (Resistance-Change Memory) is one of the research directions. It uses a completely different new technology and new storage principles. For example, resi...

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Problems solved by technology

Although this method is simple in principle, some additional circuits are required for implementation, which leads to an increase in cost and is not conducive to large-scale production.

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