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NIP-NIP thin-film photovoltaic structure

A photovoltaic and thin-film technology, applied in the field of thin-film multi-junction photovoltaic structures, can solve the problems of increasing the complexity and cost of PIN-PINPV structures, obstacles, and inability to cut tempered glass.

Inactive Publication Date: 2010-08-11
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the PIN-PIN process requires the substrate material as the sun-exposed surface, this increases the complexity and cost of PIN-PIN PV structure fabrication, and it is very difficult to manufacture tempered glass to achieve the level of flatness required for thin film deposition processes
In addition, tempered glass cannot be cut after the tempering process, which prevents the manufacture of large PV panels and the subsequent cutting of these panels into smaller sizes required for specific applications

Method used

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  • NIP-NIP thin-film photovoltaic structure
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Embodiment Construction

[0020] The present invention generally includes thin film multi-junction PV structures and methods and apparatus for forming such PV structures. Specifically, the present invention includes an improved NIP-NIP structure and methods and devices for forming the NIP-NIP structure.

[0021] The NIP-NIP structure involves a more difficult manufacturing process than the PIN-PIN structure, however the NIP-NIP structure has the potential to achieve higher conversion efficiency at a higher deposition rate, achieving a lower cost per watt than the PIN-PIN structure.

[0022] In existing NIP-NIP PV fabrication, metal substrates or metal-coated substrates are utilized to form the back electrical contacts and provide the back reflective surface needed to improve the light-trapping efficiency of the PV module. An active absorbing silicon layer is deposited on this metal face, which creates difficulties in dividing the panel into interconnected cells without compromising cell performance.

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Abstract

A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate.

Description

technical field [0001] Embodiments of the invention generally relate to a photovoltaic structure and methods and apparatus for forming the photovoltaic structure. More specifically, embodiments of the present invention relate to a thin film multi-junction photovoltaic structure and methods and apparatuses for forming the photovoltaic structure. Background technique [0002] Photovoltaic (PV) structures are devices that convert sunlight into direct current (DC) electrical power. The PV structure can be a single junction or multiple junctions with each junction having a p-doped region, an intrinsic region and an n-doped region. [0003] In a single-junction PV structure, only photons with energy equal to or greater than the band gap of the cell material are absorbed and converted into electricity. Low energy photons are not utilized; thus single junction cells are relatively inefficient. Multi-junction cells are more efficient because there are more PIN junctions to absorb ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H02S30/20
CPCH01L31/18Y02E10/52H01L31/202Y02E10/545H01L31/076H01L27/1422H01L31/1824H01L31/1884Y02E10/548H01L31/0475Y02P70/50
Inventor 约翰·M·怀特崔寿永
Owner APPLIED MATERIALS INC