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Preparation method of micro-arc oxidation film layer under effect of magnetic field

A technology of micro-arc oxidation and magnetic field, applied in the preparation of micro-arc oxidation film under the action of magnetic field, the field of preparation of oxide film, can solve the problem of increasing tolerance polarization, decreasing film growth rate, decreasing anion concentration, etc. problems, to achieve the effect of improving the performance of the film, improving the appearance, and increasing the growth rate of the film

Active Publication Date: 2010-09-29
CSIC NO 12 RES INST
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a micro-arc oxidation film layer under the action of a magnetic field, which solves the problem of the reduction of the anion concentration and the increase of the tolerance polarization degree in the solution layer near the workpiece surface in the existing micro-arc oxidation film layer preparation method , the problem that the growth rate of the film layer decreases

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  • Preparation method of micro-arc oxidation film layer under effect of magnetic field
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  • Preparation method of micro-arc oxidation film layer under effect of magnetic field

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preparation example Construction

[0023] The preparation method of the micro-arc oxidation film layer under the action of the magnetic field of the present invention is specifically implemented according to the following steps:

[0024] Step 1: decontaminate and degrease the surface of workpiece 3;

[0025] Step 2: using a magnetic field oxidation device, the structure of the magnetic field oxidation device is as follows figure 1 As shown, it includes an oxidation tank 1, an oxidation solution is placed in the oxidation tank 1, a micro-arc oxidation power supply 5 is connected to the oxidation tank 1, an iron core 2 is arranged in the oxidation tank 1, a coil 7 is wound on the iron core 2, and a coil 7 An adjustable electromagnet power supply 4 is connected to the top, and a solution cooling system 6 is arranged on one side of the oxidation tank 1. The processed workpiece 3 obtained in step 1 is placed between the two poles of the iron core 2, and the workpiece 3 and the micro-arc oxidation power supply 5 Con...

Embodiment 1

[0034] Step 1: Decontaminate and degrease the surface of ZM5100×60×5mm workpiece;

[0035] Step 2: using a magnetic field oxidation device, the structure of the magnetic field oxidation device is as follows figure 1 As shown, including the oxidation tank 1, the oxidation tank 1 is equipped with an oxidation solution, and its composition is 5g / lNa 2 SiO 3 , the oxidation tank 1 is connected with a micro-arc oxidation power supply 5, the oxidation tank 1 is provided with an iron core 2, the iron core 2 is wound with a coil 7, and the coil 7 is connected with an adjustable electromagnet power supply 4, one side of the oxidation tank 1 A solution cooling system 6 is provided, the processed workpiece 3 obtained in step 1 is placed between the two poles of the electromagnet, the workpiece is connected to the positive pole, and the oxidation tank is connected to the negative pole, the magnetic induction intensity is set to 2500Gs, the micro-arc oxidation frequency is 500Hz, and the ...

Embodiment 2

[0037] Step 1: Decontaminate and degrease the surface of LY1280×60×5mm workpiece;

[0038] Step 2: using a magnetic field oxidation device, the structure of the magnetic field oxidation device is as follows figure 1 As shown, including the oxidation tank 1, there is an oxidation solution in the oxidation tank 1, and its composition is: 3g / lNa 2 SiO 3 +2g / lNaAlO 2 +0.6g / lNa 2 B 4 o 7 +0.01g / lLaCl 3 , the oxidation tank 1 is connected with a micro-arc oxidation power supply 5, the oxidation tank 1 is provided with an iron core 2, the iron core 2 is wound with a coil 7, and the coil 7 is connected with an adjustable electromagnet power supply 4, one side of the oxidation tank 1 A solution cooling system 6 is provided, the processed workpiece 3 obtained in step 1 is placed between the two poles of the electromagnet, the workpiece is connected to the positive pole, the oxidation tank is connected to the negative pole, the magnetic induction intensity is set to 500Gs, the micr...

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Abstract

The invention discloses a preparation method of micro-arc oxidation film layer under effect of magnetic field, which comprises the following steps that: decontamination and oil removal are proceeded on the surface of a work piece; micro-arc oxidation treatment are undertaken on the work piece after the decontamination and the oil removal under the effect of the magnetic field to obtain the micro-arc oxidation film layer. The preparation method of the micro-arc oxidation film layer under the effect of the magnetic field reduces the solubility difference polarity trend of the oxidation liquid, accelerates the transfer process of the solvend, promotes the micro-arc oxidation, improves the growth rate of the film layer, can improve the appearance of the micro-arc oxidation film layer, improves the growth rate of the film layer so as to improve the performance of the film layer.

Description

technical field [0001] The invention belongs to the technical field of material surface engineering, and relates to a preparation method of an oxide film layer, in particular to a preparation method of a micro-arc oxidation film layer under the action of a magnetic field. Background technique [0002] Micro-arc oxidation is to place Al, Mg, Ti, Ta, Nb and other valve metals and their alloys in a certain electrolyte system, and use electrochemical methods to generate spark discharge spots in the micropores on the surface of the material. Under the joint action of bulk chemistry and electrochemistry, a method of forming a ceramic film layer on the surface of a valve metal. The film obtained in this way has properties such as wear resistance, corrosion resistance, and high temperature impact resistance that are significantly higher than those of traditional anodized films. Its microhardness can reach up to 2000Hv, its thickness can reach 200-300μm, and it is metallurgically bo...

Claims

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Application Information

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IPC IPC(8): C25D11/02
Inventor 穆耀钊王育召张镜斌杨艳孙长涛
Owner CSIC NO 12 RES INST
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