Non-volatile memory with ovonic threshold switches

Abstract

The invention relates to a non-volatile memory with ovonic threshold switches. The memory device including a plurality of memory cells being arranged in a matrix having a plurality of rows and a plurality of columns. Each memory cell includes a storage element and a selector for selecting the corresponding storage element during a reading operation or a programming operation. The memory device further including a plurality of row lines each one for selecting the memory cells of a corresponding row and a plurality of column lines each one for selecting the memory cells of a corresponding column. The memory device further includes for each line among the row lines and / or the column lines a respective set of local lines each one for selecting a group of memory cells of the corresponding line, and a respective set of selection elements each one for selecting a corresponding local line of the set in response to the selection of the respective line.

Description

technical field [0001] The present disclosure relates to the field of integrated memories. In particular, the present disclosure relates to non-volatile memory devices; more particularly, the present disclosure relates to phase change memory devices. Background technique [0002] Various types of memory devices have been proposed in recent years. For example, bidirectional or phase change memory (PCM) is a non-volatile memory that employs material properties that can be reversibly switched between amorphous and crystalline phases, such as chalcogenide alloys. PCM can be viewed as E 2 PROM because it is non-volatile and electrically rewritable. A phase change material exhibits different electronic properties depending on its phase, each representing a corresponding logical value. An example of a phase change memory is described in US5166758A. [0003] Typically, a memory device includes a matrix of memory cells, each including memory elements connected in series to an ac...

AI Technical Summary

Problems solved by technology

As already mentioned, said current spikes can stress the storage elements of the cell and can cause unwanted spurious programming of the storage elements

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