Temperature control method for heating apparatus

Abstract

A temperature control method for a heating apparatus including a chamber which can be evacuated and has a conductive portion, a filament which is positioned in the chamber, a first power supply which supplies a current to the filament, a second power supply which applies, to the filament, a voltage for acceleration to the chamber, an ammeter which measures a current of the filament, and a voltmeter which measures the acceleration voltage, the method comprises a first step of evacuating an interior of the chamber; a second step of supplying the filament current from the first power supply to the filament after the first step; a third step of applying the acceleration voltage to the filament after the second step; and a fourth step of controlling the acceleration voltage to keep a surface temperature of the chamber to be lower than a temperature of the filament after the third step while keeping constant the filament current from the first power supply.

Description

technical field [0001] The present invention relates to a temperature control method for a heating device using an electron impact heating method that heats a semiconductor substrate to a high temperature in a vacuum in a manufacturing process of a semiconductor device. Background technique [0002] The manufacture of semiconductor devices requires a process of rapidly heating a semiconductor substrate. Generally, a temperature of 1600° C. or higher is especially necessary in the activation annealing treatment of wide bandgap semiconductors represented by silicon carbide (SiC) (see, reference 1: T.Kimoto, N.Inoue and H.Matsunami : Phys. Stat. Sol. (a) Vol. 162 (1997), p. 263). [0003] In the activation annealing process, in order to ensure high reliability of semiconductor devices, it is very important to electrically activate 100% of the doped impurities and restore a perfect crystal. In order for the activation annealing process to be usable for industry requirements, t...

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Problems solved by technology

[0018] As described above, the temperature control method in Japanese Patent No. 3866685 suffers from failure in stably controlling the heater temperature due to runaway emission current at heater temperatures of 2000°C or higher

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