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Method for deep etching of silicon dioxide using photoresist as mask

A silicon dioxide and photoresist technology, applied in the directions of light guides, optics, optical components, etc., can solve the problems of poor etching resistance of photoresist, low selection ratio, and insufficiently steep etching profile, and achieve etching The effect of good shape, high selection ratio and steep side wall

Inactive Publication Date: 2011-12-21
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the following difficulties need to be overcome: photoresist has poor etching resistance, low selectivity ratio, and the etching profile is not steep enough

Method used

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  • Method for deep etching of silicon dioxide using photoresist as mask
  • Method for deep etching of silicon dioxide using photoresist as mask
  • Method for deep etching of silicon dioxide using photoresist as mask

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] Such as figure 1 as shown, figure 1 It is a process flow chart of carrying out deep etching of silicon dioxide with photoresist as a mask provided by the present invention, and the method includes:

[0025] Step 1: preparing a photoresist mask on the surface of the silicon dioxide sample;

[0026] In this step, after the sample is cleaned, a photoresist mask is prepared through processes such as uniform coating, pre-baking, exposure, post-baking, and development. Thick glue is used, the rotation speed is 2500-3000 rpm, and the thickness of the photoresist is 7-10 microns.

[0027] The etching process is essentially a mask transfer process, so the production of photoresist masks is very important for the etching ...

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Abstract

The invention discloses a method for deep etching silicon dioxide by using photoresist as a mask. The method comprises: step 1: preparing a photoresist mask on the surface of a silicon dioxide sample; step 2: applying photoresist Gradient heating of the mask to harden the film; Step 3: Etching the silicon dioxide sample by ICP dry method. The invention uses the photoresist as a mask to deeply etch silicon dioxide, and has the advantages of simple and fast process, high selection ratio, etching depth up to 25 microns, good etching appearance, steep side walls, and the like.

Description

technical field [0001] The invention relates to the technical field of silicon dioxide material etching, in particular to a method for deep etching silicon dioxide by using an inductively coupled plasma etching (ICP) and using a photoresist as a mask. Background technique [0002] In SiO 2 In Si / Si optical waveguides and silicon-based neural probes, silicon dioxide deep etching is a very important step. Deep etching of silicon dioxide with a depth of several microns or even tens of microns, vertical and smooth side walls has always been a difficult point in the process. [0003] Inductively coupled plasma etching (Inductively Coupled Plasma, ICP) uses the chemical reaction between high-density plasma and etching material and the physical reaction generated by the bombardment of reactive particles to perform fine-scale etching. Compared with wet etching and traditional plasma etching, it has the following advantages: fast etching rate, high selectivity ratio, good uniformit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/136
Inventor 李艳杨富华裴为华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI