Phase change memory capable of inhibiting crosscurrent between gating diodes and preparation method thereof

Abstract

The invention belongs to the technical field of microelectronics, and discloses a preparation method of a phase change memory capable of inhibiting crosscurrent between gating diodes. The method is mainly characterized by comprising the following steps: forming a heavy doped N-type semiconductor on the substrate of a P-type semiconductor, and arranging an intrinsic semiconductor above the heavy doped N-type semiconductor; etching the intrinsic semiconductor at intervals to form a plurality of bit line oriented isolation grooves so as to divide the intrinsic semiconductor to form a plurality of gating diodes, embedding the etched bit line oriented isolation grooves within the word line of the intrinsic semiconductor, and arranging insulating medium layers in the grooves; and respectively arranging a plurality of phase change memory cells above the P-type semiconductor, and respectively connecting the phase change memory cells with a plurality of bit lines. The invention also discloses a phase change memory capable of inhibiting crosscurrent between gating diodes. The phase change memory capable of inhibiting the crosscurrent between the gating diodes can be completely compatible with a CMOS process, has the characteristics of simple and easy operation and easy realization, is applied to the high-density phase change memory, and can reduce the cost and improve the reliability ofthe memory cells.

Description

technical field [0001] The invention belongs to the field of micro-nano electronics technology, relates to phase-change memories, and in particular introduces a variety of phase-change memories capable of suppressing crosstalk current between gate diodes and preparation methods thereof. These methods can be used singly or in combination. Background technique [0002] Phase-change memory technology is based on the idea that phase-change thin films can be applied to phase-change storage media proposed by Ovshinsky in the late 1960s and early 1970s. It is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat insulating materials, and lead-out electrode materials. The basic principle of phase change memory is to use electric pulse signal to act on the device unit, so that the phase change material undergoes reversible phase tr...

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Problems solved by technology

However, the preparation of such a structure requires the addition of ion implantation and subsequent annealing process steps in the existing preparation process, thereby increasing the N-type semiconductor layer 115 under the insulating dielectric layer 19. Obviously, the increase in process steps will inevitably bring about an increase in cost. , and because the distance between the two diodes is very short, the number of holes that can be recombined by the increased N-type semiconductor layer is extremely limited, so the ability to reduce the leakage current is still relatively weak

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