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Thin-film transistor array substrate, display and manufacturing method thereof

A technology of thin-film transistors and array substrates, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of complex manufacturing process of TFT array substrates, high cost, and display brightness differences in pattern splicing areas, etc. Exposure to the Murlar phenomenon, the effect of reducing the difference in display brightness

Inactive Publication Date: 2010-10-27
TRULY SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to meet the demand for large display area, the size of TFT liquid crystal display panels is getting larger and larger, which makes the manufacturing process of TFT array substrates more and more complicated.
In order to increase the size of the TFT array substrate, the size of the reticle needs to be increased accordingly. However, due to the limitation of the exposure machine on the size of the reticle, and the large-size reticle has problems such as manufacturing difficulties, high cost, and inconvenient daily storage and use. , so that when manufacturing a TFT array substrate, it is necessary to divide the large-sized array substrate into several regions, and make reticles corresponding to each region, and use these reticles to expose separately during manufacturing, and finally assemble a large-sized TFT array substrate
[0005] However, the inventor found in the research process that when the TFT array substrate manufactured by the above method is used to form a TFT liquid crystal display, when the power is turned on, the display brightness of each pattern splicing area often has obvious differences. This difference is due to the splicing Exposure produced, known as the exposure Mura phenomenon

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  • Thin-film transistor array substrate, display and manufacturing method thereof
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  • Thin-film transistor array substrate, display and manufacturing method thereof

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Embodiment Construction

[0037] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0039] Secondly, the present invention is described in detail in conjunction with the schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagrams showing the structure of the device will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit this invention. scope of invention protect...

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Abstract

The invention provides a thin-film transistor array substrate, a display and a manufacturing method thereof. The TFT array substrate comprises at least two splicing regions. In a TFT pattern in each splicing region, a drain electrode and a grid metal layer both form an overlapping region. In the TFT pattern in at least one splicing region, the drain electrode extends from the first boundary of the grid metal layer to the outside of a second boundary, opposite to the first boundary. The drain electrodes comprise the overlapping regions and redundance regions, wherein the overlapping regions are formed by the drain electrodes and the grid metal layers, and the redundance regions extend to the outsides of the second boundaries of the grid metal layers; and the difference value of the area of the overlapping region in each splicing region is smaller than a threshold value. By changing the shapes of the patterns of the drain electrodes in the TFT patterns in the splicing regions, the condition that the difference of the area of the overlapping region formed by the drain electrode and the grid metal layer in each splicing region is not large is ensured, thereby attenuating the difference of the display brightness of each splicing region and reducing the generation of the exposure Kamla phenomenon.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a thin film transistor array substrate, a display and a manufacturing method thereof. Background technique [0002] The information society increasingly needs thin, light and portable display devices. Currently, the more mature products are TFT (Thin Film Transistor, thin film transistor) liquid crystal displays. [0003] A TFT liquid crystal display is mainly composed of a TFT array substrate, an opposing color filter substrate, and a liquid crystal layer sandwiched between the two substrates. Among them, the TFT array substrate mainly includes a glass substrate, and a gate metal layer, a gate insulating layer, a semiconductor layer, a source and drain metal layer, an insulating film protection layer, and a transparent pixel layer are stacked on the glass substrate. The manufacturing process of the TFT array substrate is to transfer the pattern on the mask plate to the s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/13H01L27/32H01L21/77
Inventor 胡君文陈天佑李林洪胜宝谢凡何基强
Owner TRULY SEMICON
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