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Lithographic method and arrangement

A technology of lithography and pattern features, applied in microlithography exposure equipment, photolithography exposure equipment, optics, etc., can solve problems such as difficult to achieve

Inactive Publication Date: 2010-12-22
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Lithographic method and arrangement

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Embodiment Construction

[0030] Although specific reference is made herein to lithographic apparatus for IC fabrication, it should be understood that the lithographic apparatus described herein may have other applications for fabricating components with microscale, and even nanoscale features, such as for fabricating integrated optical systems, magnetic Guidance and detection patterns for domain memories, liquid crystal displays (LCDs), thin-film magnetic heads, etc. Those skilled in the art will appreciate that, in the case of this alternate application, any term "wafer" or "die" used therein may be considered synonymous with the more general term "substrate" or "target portion", respectively. righteous. The substrate referred to here can be processed before or after exposure, such as in a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and / or in the inspection tool. Where applicable, the disclosure herein may be employed in s...

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Abstract

The invention provides a lithographic method and arrangment. The lithographic method includes exposing a first layer of material to a radiation beam to form a first pattern feature in the first layer, the first pattern feature having sidewalls, and a focal property of the radiation beam being controlled to control a sidewall angle of the sidewalls; providing a second layer of material over the first pattern feature to provide a coating on sidewalls of the first pattern; removing a portion of the second layer, leaving a coating of the second layer of material on sidewalls of the first pattern;removing the first pattern formed from the first layer, leaving on the substrate at least a part of the second layer that formed a coating on sidewalls of that first pattern, the part of the second layer left forming second pattern features in locations adjacent to the locations of sidewalls of the removed first pattern feature.

Description

technical field [0001] The invention relates to a lithography method and arrangement. The lithographic arrangement may be or may comprise a lithographic apparatus as described below. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate a circuit pattern consistent with the individual layers of the IC and to image the pattern onto a surface having a radiation-sensitive material (anti- etchant) on a target portion (eg, including a portion of the die, one or more dies) on a substrate (eg, a silicon wafer) of a layer. Typically, a single substrate will contain a network of successively exposed adjacent target portions. Known lithographic apparatuses include: so-called steppers, in which each ...

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Application Information

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IPC IPC(8): G03F7/00G03F7/20
CPCH01L21/0337H01L21/0338G03F7/70641G03F7/70533H01L21/0274G03F7/40Y10T428/24802
Inventor P·尼古尔斯基J·M·芬德尔斯R·J·S·格劳恩迪吉克
Owner ASML NETHERLANDS BV