Method for making gate oxide layer and gate polysilicon layer

Abstract

The invention discloses a method for manufacturing a gate oxide layer and a gate polysilicon layer, comprising: simultaneously growing a gate oxide layer on the semiconductor substrate silicon of a product wafer and a control wafer; The gate polysilicon layer is deposited on the surface of the layer; the thickness of the product wafer gate polysilicon layer is measured online, and the thickness of the gate oxide layer on the control wafer is measured offline. Using this method can prevent the gate oxide layer from being oxidized when it is exposed to air during the measurement process.

Description

technical field [0001] The invention relates to a semiconductor device manufacturing process, in particular to a method for making a gate oxide layer and a gate polysilicon layer. Background technique [0002] At present, with the development of semiconductor technology, the operating speed of semiconductor devices is getting faster and faster, the integration of chip circuits is getting higher and higher, and the power consumption is getting lower and lower, so that the characteristic size of the gate polysilicon layer of semiconductor devices Parameters such as the thickness of the gate oxide layer (Gate Oxide) gradually become smaller. A semiconductor device includes a core (core) area and an peripheral circuit (IO) area. Among them, the growth thickness of the gate oxide layer in the core area is relatively thin, about less than 20 angstroms; the peripheral area of ​​the core area is called the peripheral circuit area, which is about 50-100 angstroms. Thickness measure...

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Problems solved by technology

The gate oxide layer is very easy to oxidize in the air, and a gate oxide layer thickness of about 0.5 to 1 angstrom can be grown in 0.5 hours, and the thickness of the gate oxide layer is inherently very thin, and a slight change in the thickness will lead to degradation of device performance. reduce

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