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Temperature measurement and control of wafer support in thermal processing chamber

A technology of rapid heat treatment and substrate support, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unreachable

Active Publication Date: 2011-02-16
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Today's RTP lamp assemblies cannot achieve this goal because the radiation coverage area is larger than the edge ring

Method used

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  • Temperature measurement and control of wafer support in thermal processing chamber
  • Temperature measurement and control of wafer support in thermal processing chamber
  • Temperature measurement and control of wafer support in thermal processing chamber

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Embodiment Construction

[0024] The present invention provides apparatus and methods that help achieve uniform heating of a substrate during rapid thermal processing. More specifically, embodiments of the present invention provide apparatus and methods for controlling the temperature of an edge ring supporting a substrate during rapid thermal processing to improve temperature uniformity across the substrate.

[0025] figure 2 A cross-sectional view of a rapid thermal processing system 10 according to an embodiment of the present invention is briefly described. The rapid thermal processing system 10 includes a chamber body 35 defining a processing volume 14 configured to anneal a disk-shaped substrate 12 therein. The chamber body 35 may be made of stainless steel and lined with quartz. The processing space 14 is radiatively heated by a heating assembly 16 placed on a quartz window 18 of the rapid thermal processing system 10 . In one embodiment, the quartz window 18 may be water-cooled.

[0026] A...

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Abstract

An apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, an apparatus and methods for controlling the temperature of an edge ring supporting a substrate and / or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.

Description

technical field [0001] The present invention generally relates to the field of semiconductor processing. More particularly, the present invention relates to methods and apparatus for thermally treating semiconductor substrates. Background technique [0002] Fabrication of integrated circuits from silicon or other wafers involves many steps of depositing layers, photolithographically patterning layers, and etching patterned layers. Ion implantation is used to dope active regions in semiconductor silicon. The fabrication process also includes wafer thermal annealing, crystallization, thermal oxidation and nitridation reactions, silicidation reactions, chemical vapor deposition, vapor phase doping, thermal cleaning and other factors with multiple uses to eliminate implant damage and activate dopants. While annealing in early silicon technology typically involved heating multiple wafers in an anneal furnace for extended periods of time, rapid thermal processing (RTP) has incre...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/324H01L21/687
CPCH01L21/67248H01L21/67115H01L21/67109
Inventor 库赫斯特·索瑞伯基亚历山大·N·勒纳约瑟夫·M·拉内什阿伦·M·亨特布鲁斯·E·亚当斯梅兰·贝德亚特拉杰士·S·罗摩努亚姆
Owner APPLIED MATERIALS INC