Nonrolatile storage system capable of reducing filter capacitor

A memory system, non-volatile technology, applied in the field of memory systems to reduce chip area and filter capacitance

Active Publication Date: 2011-03-23
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is often a contradiction between the drive capability and the matching of the filter capacitor

Method used

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  • Nonrolatile storage system capable of reducing filter capacitor
  • Nonrolatile storage system capable of reducing filter capacitor
  • Nonrolatile storage system capable of reducing filter capacitor

Examples

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Embodiment Construction

[0012] In the embodiment of the present invention, the charge pump and Flash or EEPROM system are in the original system (such as figure 1 , figure 2 , image 3 (Shown) based on the main changes to the charge pump (such as Figure 4 Shown): In the charge pump, each stage of the circuit adds a switch circuit for the capacitor Ct, selects the actual capacitor used, thereby adjusting the driving ability of the charge pump, and leads the control signal (en, enb); leads to reflect the difference between Flash or EEPROM The signal of the operation mode (Mode); design the control circuit, according to the specific operation mode Mode, generate the correct en and enb signals according to the design; Figure 5 The method shown is connected to the corresponding modules, so as to select the appropriate drive capability according to different operating modes.

[0013] In this way, in the all selection mode, Ct=Ct0+Ctc, and the driving capability meets the requirements of this mode. Since th...

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PUM

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Abstract

The invention discloses a nonrolatile storage system capable of reducing filter capacitor, comprising a charge pump circuit, a charge pump control circuit and a nonrolatile storage, wherein the charge pump circuit comprises a N-level capacitor and N is a positive integer; the capacitor at each level is provided with a switching circuit which is connected with the capacitor; the switching circuit is connected with the charge pump control circuit; and the charge pump control circuit generates the different operating signals to control the switching circuit in accordance with the different operating modes of the storage. In the invention, regulation of drive capacity is realized by regulating the capacitor. In a partial selection mode, the capacitance is reduced so as to reduce the drive capacity of the charge pump, thereby decreasing the required filter capacitor; and in a full selection mode, the capacitance is improved so as to meet the drive capacity required by the mode. A switch is arranged in the charge pump and is used for controlling the capacitance, thus being capable of flexibly decreasing the filter capacitor and reducing chip area.

Description

Technical field [0001] The invention relates to a memory system, in particular to a non-volatile memory system. Background technique [0002] Currently, such as Figure 1 to Figure 3 As shown, in a non-volatile memory system, a charge pump with a fixed drive capability is usually selected according to the requirements of Flash or EEPROM, and then the filter capacitor is selected according to the filtering requirements of the charge pump. In this way, the situation is that the drive capacity is selected as the largest, and the filter capacitor is also selected. The actual situation is often that when a larger drive capacity is required, additional filter capacitors are not needed, and when additional filter capacitors are needed, No need for such a large drive capacity. There is often a contradiction between the matching of drive capability and filter capacitor. Summary of the invention [0003] The technical problem to be solved by the present invention is to provide a non-volati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/02G11C16/06
Inventor 董乔华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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