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Room-temperature terahertz wave detector

A detector and terahertz technology, which is applied in the field of terahertz wave detectors, can solve the problems of high equivalent noise power, low sensitivity, and difficult processing, so as to achieve increased electric field strength, high sensitivity and low noise detection, and avoid mutual crosstalk Effect

Active Publication Date: 2012-10-10
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0003] The purpose of the present invention is to propose a room temperature terahertz wave detector to overcome the existing high electron mobility terahertz wave detector processing difficulties, low sensitivity, high equivalent noise power and other deficiencies

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Embodiment Construction

[0019] The present invention realizes the detection of terahertz waves through the effective control of the gate of the high electron mobility field effect transistor on the two-dimensional electron gas, and integrates a butterfly antenna structure independent of the source and drain at the channel to achieve Effectively enhance the terahertz wave electric field. The detector can generate photocurrent or open-circuit voltage under the irradiation of terahertz waves, and the antenna independent of the source and drain can effectively improve the sensitivity, thereby realizing high-speed, high-efficiency, high-sensitivity, and low-noise room temperature detection.

[0020] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings and a preferred embodiment.

[0021] Such as Figure 1~2 As shown, the room temperature terahertz wave detector is mainly composed of a high electron mobility transistor and a pair of ...

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Abstract

The invention relates to a room-temperature terahertz wave detector which uses a transistor with high electron mobility as a basic structure and comprises an antenna capable of efficiently coupling with terahertz waves, wherein the antenna and the transistor with high electron mobility are integrally arranged, but the antenna is mutually independent from the source electrode and drain electrode of the transistor with high electron mobility; a pair of butterfly antennae are connected between the source electrode and the drain electrode so as to generate a crosswise terahertz electric field in an electron channel; and one butterfly antenna is connected to the drain electrode of the transistor with high electron mobility so as to generate a lengthways terahertz electric field in the electronchannel. By utilizing the detector provided by the invention, the regulation and control carried out on the two-dimensional plasma wave by the grid electrode of the transistor with high electron mobility can be effectively enhanced, and the terahertz wave can be detected with high speed, high efficiency, high sensitivity and low noise; simultaneously, under the working condition of room temperature, the application scope of terahertz wave can be obviously widened, and the application cost can be lowered; and, the room-temperature terahertz wave detector can be manufactured by using a semiconductor micro-processing technique with minimized device structure and high integrated level.

Description

technical field [0001] The invention particularly relates to a terahertz wave detector in the field of semiconductor terahertz optoelectronic technology, which can realize sensitive detection of terahertz waves at room temperature. Background technique [0002] Terahertz wave (THz) is an electromagnetic wave with a frequency of 0.3THz-30THz (wavelength of about 10μm-1mm, photon energy of about 1.2meV-120meV), which is between infrared waves and millimeter waves, and is a very important part of the electromagnetic spectrum. band. Compared with traditional light sources, terahertz wave radiation sources have unique and excellent characteristics such as coherence, low energy, and strong penetrating power. , non-destructive imaging, molecular electronics, new material research and radar communication have important application prospects. However, existing commercial terahertz detectors have disadvantages such as low sensitivity, narrow detection frequency, slow response speed,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/112H01L31/0224G01J1/42
Inventor 孙建东孙云飞曾春红秦华张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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