HBAR resonator stable at high temperatures

A resonator, temperature coefficient technology, applied in electrical components, impedance networks, etc., can solve problems such as poor temperature stability, frequency thermal drift, etc.

Inactive Publication Date: 2011-05-11
CENT NAT DE LA RECHERCHE SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Due to the poor temperature stability of longitudinal waves in quartz, the temperature stability of frequency is also poor, with a linear drift of more than 20ppm (absolute value) at room temperature
So the problem of frequency thermal drift still exists, and although it can benefit from a particularly high-functioning frequency sound quality (FQ) coefficient factor (above 400MHz, FQ is greater than 1, 3.10 13 ), but does not allow this type of solution to replace, for example, bulk wave resonators for on-board frequency synthesis applications

Method used

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  • HBAR resonator stable at high temperatures
  • HBAR resonator stable at high temperatures
  • HBAR resonator stable at high temperatures

Examples

Experimental program
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Embodiment Construction

[0069] figure 1 with figure 2 An embodiment of the high-body acoustic resonator 2 according to the present invention is shown.

[0070] The resonator 2 includes a stack of continuous layers, which includes:

[0071] The thickness made of aluminum is e 1 The upper electrode 4;

[0072] Composed of the first material with a first thickness t 1 The piezoelectric transducer 6, the first material is single crystal lithium niobate (LiNbO3);

[0073] The thickness made of gold is e 2 The embedded counter electrode 8;

[0074] Composed of a second material with a second thickness t 2 The acoustic substrate 10, where the second material is single crystal quartz.

[0075] figure 1 The layers 4, 6, 8 and 10 in the all have the same length l and width W, the length l is obviously greater than the width W and different layer thickness e 1 , T 1 , E 2 , And t 2 Big.

[0076] To simplify figure 1 , The electrodes 4, 8 are shown as sharing surfaces with the piezoelectric transducer 6.

[0077] Specifical...

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Abstract

The invention relates to a resonator of the harmonic bulk acoustic resonator HBAR type, comprising a piezoelectric transducer (6) clamped between two electrodes (4, 8) with a strong electroacoustic coupling, cut according to a first cutting angle T1, and an acoustic substrate (10) with a working frequency acoustic quality coefficient at least equal to 5.1012, cut according to a second cutting angle T2 with at least one shearing vibration mode. The transducer and the substrate are arranged in such a way that the polarisation direction of the shearing mode of the transducer and the polarisation direction of the shearing of the substrate are aligned, and the second cutting angle T2 is such that the temperature coefficient of the frequency of the first order CTFB1 corresponding to the shearing mode and to the second cutting angle T2 is zero with inversion of the sign thereof on either side of, or equal to, a bias.

Description

Technical field [0001] The present invention relates to a high-body acoustic resonator (HABR) type resonator with high temperature stability, a corresponding manufacturing method, and an oscillator and a filter including at least one of the resonator. Background technique [0002] Electroacoustic resonators are used for temperature stabilization of electronic oscillators and for multiple signal processing applications (highly selective filtering, low-band detection, encoding, etc.). The base frequency of its passive components is 50MHz-20GHz Within the frequency range. [0003] These devices are optimized for their specific application while trying to maximize, for example, their quality factor or coupling factor. [0004] It is generally difficult to find a structure that can provide a good compromise between strong electromechanical coupling, high quality coefficient and thermal stability. [0005] Various solutions based on surface acoustic waves for applications up to 2.5 GHz can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02
CPCH03H9/02078H03H9/02031H03H9/02047H03H9/172
Inventor S·巴朗德拉D·加雄
Owner CENT NAT DE LA RECHERCHE SCI
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