Method for fabricating semiconductor light-emitting device with double-sided passivation
A technology for light-emitting devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of increased leakage current, increased surface recombination rate and reverse leakage current, and decreased LED efficiency and stability.
Inactive Publication Date: 2011-05-18
LATTICE POWER (JIANGXI) CORP
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In turn, the increased surface recombination rate increases the amount of reverse leakage current, resulting in reduced LED efficiency and stability
In addition, the metal forming the p-side electrode diffuses into the active area, increasing the leakage current
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[0021] The following description is given to enable one skilled in the art to make and use the invention, and is presented in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the invention. The invention is thus not intended to be limited to the examples given, but is to be accorded the broadest scope accorded to the claims.
[0022] Embodiments of the present invention provide a method for preparing an LED device with double-sided passivation. Double-sided passivation covers the upper and lower sides of the device, which can effectively reduce the surface recombination of carriers, thereby improving the stability of the LED device. In one embodiment of the present invention, instead of depositing only a single passivati...
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A method for fabricating a semiconductor light-emitting device includes fabricating a multilayer semiconductor structure on a first substrate, wherein the multilayer semiconductor structure comprises a first doped semiconductor layer, an MQW active layer, a second doped semiconductor layer, and a first passivation layer. The method further involves patterning and etching part of the first passivation layer to expose the first doped semiconductor layer. A first electrode is then formed, which is coupled to the first doped semiconductor layer. Next, the multilayer structure is bonded to a second substrate; and the first substrate is removed. A second electrode is formed, which is coupled to the second doped semiconductor layer. Further, a second passivation layer is formed, which substantially covers the sidewalls of multilayer structure and part of the surface of the second doped semiconductor layer which is not covered by the second electrode.
Description
technical field [0001] The invention relates to a method for preparing a semiconductor light emitting device. More specifically, the present invention relates to a method for preparing a novel semiconductor light-emitting device with double-sided passivation that can effectively reduce leakage current and enhance device reliability. Background technique [0002] Look forward to solid-state lighting leading the next generation of lighting technology. Highly light-emitting diodes (HB-LEDs) are used in an increasing number of applications, from being used as light sources in display devices to replacing light bulbs for traditional lighting. Generally speaking, cost, energy efficiency and brightness are the three most important parameters that determine the commercial viability of LEDs. [0003] The light generated by the LED comes from the active region, which is sandwiched between an acceptor doped layer (p-type doped layer) and a donor doped layer (n-type doped layer). Whe...
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IPC IPC(8): H01L33/12
CPCH01L33/44H01L33/0079H01L33/0093H01L33/12
Inventor 江风益王立
Owner LATTICE POWER (JIANGXI) CORP