Etching control method
A technology of corrosion control and dry etching, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of long waiting time for dry etching of wafers, residual photoresist on the surface of aluminum layer, etc., and improve the quality of products rate and production efficiency, reduce production costs, and prevent residue effects
Active Publication Date: 2012-10-10
CSMC TECH FAB2 CO LTD
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Problems solved by technology
[0004] In order to solve the problem of photoresist residue on the surface of the aluminum layer caused by the long waiting time of the wafers for dry etching, it is necessary to provide a corrosion control method to monitor the wafers waiting in line for dry etching of aluminum
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no. 1 approach
[0015] Figure 4 is a flowchart of the corrosion control method. It will be described through specific examples below. A first embodiment of the corrosion control method includes the following steps:
[0016] Obtain the wafer information of each process.
[0017] This information includes information such as the operator of each process, the start time, the end time, and the operation equipment; it also includes the time T required to wait for the dry etching of the wafer to be etched 1 and the remaining time T for the dry etching wafer to complete the dry etching 2 Wafer parameters such as dry etching.
[0018] T 1 is the time required for all wafers waiting for dry etching to complete the dry etching process. For example, there are three batches of wafers waiting for dry etching, assuming that each batch of wafers requires 1 hour for dry etching, then T 1 =3*1=3 hours. T 2 It is the time remaining for the dry-etched wafer to complete the dry-etch process.
[0019] ...
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The invention relates to an etching control method. The etching control method comprises the following steps of: acquiring a wafer information parameter of each procedure, wherein the wafer information parameter comprises the wafer information parameter of dry etching; performing etching control according to the wafer information parameter; if the wafer information parameter of dry etching is less than a preset value and no photoresist residue occurs in a wafer to be subjected to dry etching, controlling the wafer to enter a wet etching procedure; and if the wafer information parameter of dryetching is not less than a preset value and the photoresist residue occurs in a wafer to be subjected to dry etching, controlling the wafer to wait continuously. Compared with the traditional process, the etching control method has the advantages that: the steps of acquiring the wafer information parameter of each procedure and performing etching control are added; the wafer of wet etching aluminum is controlled; coordination between an aluminum wet method and dry etching is realized; the etching procedure of the wafer is finished within the specific time; and the photoresist residue on the surface of an aluminum layer caused by long time of waiting for dry etching is avoided, so that good product rate and production efficiency of chips are improved and production cost is reduced.
Description
【Technical field】 [0001] The invention relates to a semiconductor manufacturing process, in particular to an aluminum corrosion control method. 【Background technique】 [0002] In the semiconductor manufacturing process, the etching of aluminum can be carried out in two steps: first wet etching, and then dry etching. figure 1 It is a flow chart of the traditional two-step aluminum etching process. There is a waiting process between wet etching aluminum and dry etching aluminum. [0003] In the process from wet etching to dry etching, if the waiting time in the queue is too long, the photoresist on the aluminum surface will bubble, resulting in photoresist residue even after the glue is removed. figure 2 It is a top view photo of the residual photoresist on the aluminum surface after waiting in line for dry etching for 18 hours. image 3 It is a cross-sectional photo of the residual photoresist on the aluminum surface after waiting in line for dry etching for 18 hours. 【C...
Claims
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IPC IPC(8): H01L21/00
Inventor 王军
Owner CSMC TECH FAB2 CO LTD