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Buffer layer manufacturing method and photoelectric conversion device

A photoelectric conversion device and photoelectric conversion technology, which are used in photovoltaic power generation, final product manufacturing, chemical instruments and methods, etc., can solve the problems of difficulty in forming a buffer layer, changes in the characteristics of the photoelectric conversion layer, and inability to obtain a buffer layer. Decomposition reaction, effect of preventing change

Inactive Publication Date: 2011-08-17
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Formation of the buffer layer by the CBD method causes the problem that the characteristics of the photoelectric conversion layer are likely to change with the crystallization properties and surface state of the photoelectric conversion layer because the diffusion of the Zn or Cd component and the film formation of ZnS or CdS proceed simultaneously
[0007] Since the state of the reaction solution changes as the reaction progresses, it is difficult to form a buffer layer with a substantially uniform composition using the method described in Japanese Patent No. 4320529
In the method described in Japanese Patent Laid-Open No. 2002-343987, the state of the reaction liquid is considered to be kept constant to a certain extent, but a buffer layer having a uniform composition cannot actually be obtained

Method used

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  • Buffer layer manufacturing method and photoelectric conversion device
  • Buffer layer manufacturing method and photoelectric conversion device
  • Buffer layer manufacturing method and photoelectric conversion device

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Experimental program
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Effect test

Embodiment 1

[0056] The CdS buffer layer was formed by immersing the substrate on which the photoelectric conversion layer was formed in a reaction tank containing reaction solution 1 adjusted to 80° C., keeping the pH of the reaction solution constant by monitoring the pH using a pH meter, and A 2.0 M ammonia solution was added when the pH of the reaction liquid in which the deposition reaction was performed was lowered by 0.4 or more, and the aqueous solution was repeatedly added.

Embodiment 2

[0058] The CdS buffer layer was formed by immersing the substrate on which the photoelectric conversion layer was formed in a reaction tank containing the reaction solution 1 adjusted to 80°C, and transferring the reaction solution 1 from the reservoir storing the reaction solution 1 by using a peristaltic pump. The liquid tank is continuously supplied to the reaction tank, and at the same time, the unnecessary reaction liquid is overflowed and discharged from the reaction tank, so that the pH of the reaction liquid is kept constant.

Embodiment 3

[0060] The CdS buffer layer was formed by immersing the substrate on which the photoelectric conversion layer was formed in a reaction tank containing the reaction solution 1 adjusted to 80°C, monitoring the pH using a pH meter, and performing the reaction solution 1 of the deposition reaction therein When the pH of the solution drops by more than 0.4, replace the entire reaction solution 1 with a new reaction solution 1 adjusted to 80°C.

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Abstract

A method of manufacturing a buffer layer of a photoelectric conversion device having a stacked structure in which a lower electrode, a photoelectric conversion semiconductor layer that generates a current by absorbing light, the buffer layer, and a translucent conductive layer are stacked on a substrate, in which the buffer layer is formed by a CBD method, a pH variation of reaction solution for forming the buffer layer is controlled within 0.5 while deposition of the buffer layer by the CBD method is in progress, and the reaction solution includes a Cd or Zn metal and a sulfur source.

Description

technical field [0001] The present invention relates to a method for manufacturing a buffer layer of a photoelectric conversion device and the photoelectric conversion device. Background technique [0002] A photoelectric conversion device having a photoelectric conversion layer and an electrode connected to the photoelectric conversion layer is used in various application fields including solar cells and the like. Most conventional solar cells are Si-based cells using bulk monocrystalline Si, polycrystalline Si, or thin-film amorphous Si. Recently, however, research and development on compound semiconductor-based solar cells that do not rely on Si have been conducted. There are known two types of compound semiconductor solar cells, one of which is a bulk system, such as GaAs system, etc., and the other is a thin film system, such as CIS formed of Ib group elements, IIIb group elements, and VIb group elements. system, or CIGS, etc. The CI(G)S system is composed of the gen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/04B32B9/04B32B15/00
CPCH01L31/18H01L31/0749H01L21/02557H01L21/02628Y02E10/50Y02E10/543H01L31/0392Y02E10/541H01L21/02485H01L31/03923H01L31/03925H01L31/03926Y02P70/50
Inventor 小池理士河野哲夫
Owner FUJIFILM CORP