Growth process and device for growing IC-level silicon single crystal with low Fe content by czochralski method

Abstract

The invention relates to a growth process and device for growing an IC-level silicon single crystal with a low Fe content by a czochralski method. The method comprises the following steps of loading materials, heating the materials and pulling crystals. A diversion device, which is combined with a diversion cover and a diversion cylinder, is used in the process of pulling a single crystal silicon rod by the czochralski method and used for adjusting a position of a crucible to carry out silicon fusing and crystal pulling. The device comprises a single crystal furnace, a heater, the diversion cylinder, a quartz crucible, a graphite crucible, a thermal-insulation cover, a thermal-insulation cylinder, a tray, a cured thermal-insulation carbon felt, a curing oven bottom protective disc and a vent. By means of the process and the device disclosed by the invention, the czochralski single crystal silicon with a diameter of 150 to 200m and the Fe content of less than 5E10Atoms/cm<3> can grow, so that the czochralski single crystal silicon can meet the requirement of an integrated circuit (IC), and the material cost can be greatly reduced if the czochralski single crystal silicon is applied to the IC industry. Furthermore, because a used graphite system is not needed to be chloridized and purified, the pollution to the natural environment can be indirectly reduced.

Description

technical field [0001] The invention relates to a growth process and device for growing IC-level silicon single crystals with low Fe content by the Czochralski method, specifically for reducing the diffusion pollution of Fe to silicon single crystal ingots during the growth of silicon single crystals by the Czochralski method, and growing high-quality silicon single crystals. The process of monocrystalline silicon semiconductor materials, IC-grade silicon single crystals with low Fe content are grown in the conventional Czochralski single-crystal silicon environment, which greatly reduces the manufacturing cost of related IC-grade silicon single crystals. Background technique [0002] Metal impurities in single crystal silicon will cause deep-level defects in subsequent processing, seriously affecting device performance. The production of single crystal silicon generally adopts the Czochralski method at present; when growing a single crystal: a. Due to the diffusion of heavy...

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Problems solved by technology

[0002] Metal impurities in single crystal silicon will cause deep-level defects in subsequent processing, seriously affecting device performance

The production of single crystal silicon generally adopts the Czochralski method at present; when growing a single crystal: a. Due to the diffusion of heavy metals such as Fe, Cu, Au, etc. in the quartz crucible, graphite thermal system, and single crystal furnace into molten silicon at high temperature, The Czochralski single crystal silicon is contaminated by heavy metals; b, because the atmosphere in the furnace c

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