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Composite broadband antireflecting film and preparation method thereof

A technology of anti-reflection and anti-reflection and composite film, which is applied in the field of optical film materials, can solve the problems of high cost and energy consumption, poor strength and unevenness of porous scaffolds, etc.

Active Publication Date: 2013-10-02
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The traditional method to reduce the reflection of the substrate and improve the transmittance of the substrate is to form an anti-reflection structure on the surface of the substrate by etching technology ((1) C.Lee, S.Y.Bae, S.Mobasser, H.Manohara, Nano Lett.5(2005) 2438-2442. (2) P.B. Clapham, M.C. Hutley, Nature 244 (1973) 281-282. (3) M.E. Motamedi, W.H. Southwell, W.J. Gunning, Appl. Optics 31 (1992) 4371-4376. (4) P. Lalanne, G.M. Morris, Nanotechnology 8 (1997) 53-56. (5) Ch. H. Sund, P. Jiang, B. Jiang, Appl. Phys. Lett. 92 (2008) 061112. (6) P. Yu, Ch.H.Chang, et al., Adv.Mater.21(2009)1618-1621.US4019884), but generally the strength of the porous scaffold formed after etching is poor, the structure is easily damaged, and the acid solution used has serious environmental pollution ; Form a layer of anti-reflection film on the surface of solar cell glass by spraying (ZL 200610037956.4), and the light transmittance of the glass is increased by more than 2% in the visible light wavelength range. The disadvantages are that the cost and energy consumption are high, the film is too thick and not Uniform; monolayer or multilayer SiO prepared by sol-gel method 2 Anti-reflection coating (ZL 200480017154.6, 200510135363.7; ZLUS6918957), its disadvantage is that the single-layer coating can only achieve low reflection at some specific wavelengths, the remaining reflectivity is high, the anti-reflection effect is not ideal, and the multi-layer coating process is complex

Method used

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  • Composite broadband antireflecting film and preparation method thereof
  • Composite broadband antireflecting film and preparation method thereof
  • Composite broadband antireflecting film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Dissolve 1.97g of analytically pure diethanolamine (DEA) in 50ml of ethylene glycol methyl ether solvent, then add 4.1g of zinc acetate, and stir in a 60°C water bath for 2 hours to form a ZnO precursor sol with a concentration of 0.37mol L -1 . Use analytically pure tetraethyl orthosilicate, absolute ethanol, ammonia water and deionized water in a volume ratio of 1:10:0.2:0.1, mix at room temperature and continuously stir for 2 hours, then age for 5 days, and finally heat to reflux 12 hours to prepare SiO 2 Precursor sol; ZnO film was prepared from ZnO precursor sol by pulling coating technology at a speed of 10mm / min, and then prepared from SiO 2 Preparation of SiO from precursor sol at a speed of 50mm / min 2 film, and then cured in a closed environment at 300°C for more than 2 hours, and formed ZnO / SiO after natural cooling 2 film. ZnO and SiO 2 The thicknesses are 65nm and 135nm, respectively.

[0025] The surface morphology of the prepared ZnO thin film sample...

Embodiment 2

[0029] Dissolve 1.97g of analytically pure DEA in 50ml of ethylene glycol methyl ether solvent, then add 4.1g of zinc acetate, and stir in a 60°C water bath for 2 hours to form a ZnO precursor sol with a concentration of 0.37mol L -1 . Use analytically pure tetraethyl orthosilicate, absolute ethanol, ammonia water and deionized water in a volume ratio of 1:10:0.5:0.1, mix at room temperature and continue to stir for 2 hours, then age for 3 days, and finally heat to reflux 12 hours to prepare SiO 2 Precursor sol; ZnO film was prepared from ZnO precursor sol by pulling coating technology at a speed of 10mm / min, and then prepared from SiO 2 Preparation of SiO from precursor sol at a speed of 50mm / min 2 film, and then cured in a closed environment at 300°C for more than 2 hours, and formed ZnO / SiO after natural cooling 2 film.

Embodiment 3

[0031] Dissolve 1.97g of analytically pure DEA in 50ml of ethylene glycol methyl ether solvent, then add 4.1g of zinc acetate, and stir in a 60°C water bath for 2 hours to form a ZnO precursor sol with a concentration of 0.37mol L -1 . Use analytically pure ethyl orthosilicate, absolute ethanol, ammonia water and deionized water in a volume ratio of 1:10:0.5:0.1, mix and stir continuously at room temperature for 2 hours, then age for 10 days, and finally heat to reflux 12 hours to prepare SiO 2 Precursor sol; ZnO film was prepared from ZnO precursor sol by pulling coating technology at a speed of 10mm / min, and then prepared from SiO 2 Preparation of SiO from precursor sol at a speed of 50mm / min 2 film, and then cured in a closed environment at 300°C for more than 2 hours, and formed ZnO / SiO after natural cooling 2 film.

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Abstract

The invention relates to a composite broadband antireflecting film and a preparation method thereof. The preparation method is characterized in that zinc acetate (Zn(CH3COO)2.2H2O) and tetraethyl orthosilicate are used as precursors to form ZnO and SiO2 precursor sol or ZnO and SiO2 composite precursor sol respectively on the basis of a sol-gel technology; and then after high-temperature curing, a ZnO-SiO2 composite broadband antireflecting film structure is formed on a transparent substrate surface through a dip coating technology or spin coating technology. The composite film has the advantages of low cost, artificially-controllable nano porous structure, continuously-adjustable refractive index and good wide spectrum antireflecting property; and compared with various traditional modified single-layer SiO2 antireflecting film, the antireflecting film disclosed by the invention not only achieves broadband antireflecting but also has good photocatalysis property at an ultraviolet waveband. The novel broadband antireflecting film has a wide application prospect in the fields of transparent photoelectricity, thermoelectric conversion and photocatalysis.

Description

technical field [0001] The invention relates to a novel broadband anti-reflection and anti-reflection film and a preparation method thereof, belonging to the field of optical film materials. Background technique [0002] High power generation cost and low photoelectric conversion efficiency are the main obstacles restricting the large-scale application of photovoltaic power generation. Improving the light transmittance of solar cell surface materials by preparing new high-performance anti-reflection and anti-reflection nanostructures has become one of the important development directions for improving the photoelectric conversion efficiency of solar cells and reducing costs, which is of great significance to the promotion of solar energy utilization. [0003] The traditional method to reduce the reflection of the substrate and improve the transmittance of the substrate is to form an anti-reflection structure on the surface of the substrate by etching technology ((1) C.Lee, S...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34
Inventor 黄富强李德增梁军
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI