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Cubic MgZnO crystal thin film optical waveguide device and preparation process thereof

A preparation process and a technology for optical waveguides, which are applied to optical waveguides, photolithography process exposure devices, light guides, etc. Small birefringence effect, reduced loss, low loss effect

Inactive Publication Date: 2005-04-06
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most existing optical waveguide structures use SiO 2 As a matrix material, the refractive index of the core layer is increased by doping to achieve the purpose of limiting the optical mode. This type of waveguide structure often has relatively large stress and birefringence effects.
Heideman et al. used magnetron sputtering to grow ZnO films with two different refractive indices on Si substrates by changing the process parameters to make optical waveguide devices, and measured the waveguide loss to be 1-3dB / cm. Horsthuis reported that on SiO 2 The ZnO optical waveguide loss obtained by sputtering deposition on Si substrate is 1dB / cm. It can be seen that the optical mode loss of this type of waveguide structure is relatively large, and the purpose of changing the refractive index is achieved by introducing different concentrations of oxygen vacancies. The method is neither Simple and inaccurate, the introduction of point defects may be one of the main reasons for the increase in device loss

Method used

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  • Cubic MgZnO crystal thin film optical waveguide device and preparation process thereof
  • Cubic MgZnO crystal thin film optical waveguide device and preparation process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Embodiment 1: see attached figure 1

[0047] (1) Clean the Si(100) substrate with a standard cleaning method, and use a high-temperature oxidation process to thermally grow a uniform layer of SiO on the surface of the Si sheet 2 Thin film --- substrate 1, with a thickness of 2 μm;

[0048] (2) SiO 2 / Si(100) substrate 1 is placed in a growth chamber for low-temperature deposition of cubic MgZnO crystal thin films, and SiO is heated 2 / Si(100) substrate 1 to 100°C, bombarded with high energy electron beam (MgO) 0.10 (ZnO) 0.90 Target material, electron gun high voltage is 5000V, beam current is 30mA, filled with O 2 As a reactive gas, filled with O 2 The air pressure in the post-growth chamber was maintained at 3 × 10 -2 Pa, when the air pressure reaches 5×10 -2 Pa, start to grow, adjust the beam flow and beam spot size and position to maintain a stable pressure condition, and prepare cubic Mg with uniform grains and high surface smoothness. 0.83 Zn 0.17 O crys...

Embodiment 2

[0052] Embodiment 2: see attached figure 1 and with reference to Example 1

[0053] (1) Clean the glass substrate---substrate 1: put the glass substrate 1 in deionized water and ultrasonically clean it three times, each time for 3 minutes, then place the glass substrate in a sodium carbonate solution for 15 minutes in a water bath to remove the surface Organic matter, after taking it out, rinse it repeatedly with deionized water, and finally dry the silicon wafer with nitrogen in a laminar flow clean bench;

[0054] (2) Place the glass substrate 1 in a growth chamber for low-temperature deposition of cubic MgZnO crystal thin films, heat the glass substrate 1 to 100°C, and bombard (MgO) with a high-energy electron beam 0.10 (ZnO) 0.90 Target material, electron gun high voltage is 5000V, beam current is 30mA, filled with O 2 As a reactive gas, filled with O 2 The air pressure in the post-growth chamber was maintained at 3 × 10 -2 Pa, when the air pressure reaches 5×10 -2 P...

Embodiment 3

[0058] Embodiment 3: see attached figure 2 and with reference to Example 2

[0059] (1) Clean the glass substrate---substrate 1: put the glass substrate 1 in deionized water and ultrasonically clean it three times, each time for 3 minutes, then place the glass substrate in a sodium carbonate solution for 15 minutes in a water bath to remove the surface Organic matter, after taking it out, rinse it repeatedly with deionized water, and finally dry the silicon wafer with nitrogen in a laminar flow clean bench;

[0060] (2) Place the glass substrate 1 in a growth chamber for low-temperature deposition of cubic MgZnO crystal thin films, heat the glass substrate 1 to 100°C, and bombard (MgO) with a high-energy electron beam 0.15 (ZnO) 0.85 Target material, electron gun high voltage is 5000V, beam current is 30mA, filled with O 2 As a reactive gas, filled with O 2 The air pressure in the post-growth chamber was maintained at 3 × 10 -2 Pa, when the air pressure reaches 5×10 -2 ...

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Abstract

It is MgZnO crystal thin film light wave-guide device, which comprises underlay, down layer, and upper layer. The underlay uses glass or SiO#-[2] / Si and the core layer uses cube Mg#-[x]Zn#-[1-x]O(x>0.5) crystal thin film. The upper and down layer can be Mg#-[y]Zn#-[1-y]O(y>0.5) thin film with larger content of Mg than core layer or can be SiO#-[2] thin film and the upper layer can be air. The light wave guide device is made by growing cube Mg#-[x]Zn#-[1-x]O core layer and cover layer on the underlay with low temperature and then by wet etching or dry etching method.

Description

technical field [0001] The invention belongs to the field of oxide optical waveguide, and specifically relates to a preparation technology of a ridge optical waveguide with an oxide thin film whose refractive index is continuously adjustable with the film components as the core layer of the optical waveguide. technical background [0002] Since the first observation of the optical waveguide phenomenon in the early 1960s, with the rapid development of the optical waveguide theory, various optical waveguide devices have come out one after another and have been applied in many fields. Semiconductor optical waveguide has aroused people's research enthusiasm because of its possibility to manufacture various components required for integrated optics on the same substrate, including lasers, detectors, photoelectric switches and modulators, waveguide components and electronic circuits. The materials used in modern integrated optical devices are mainly d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/13G02B6/136G02F1/03G02F1/035G03F7/20
Inventor 吴惠桢陈乃波徐天宁余萍邱东江
Owner ZHEJIANG UNIV