Method for enhancing identifiability of pattern requiring measurement
A recognition and pattern technology, applied in the field of enhancing the recognizability of the pattern to be measured, can solve problems such as difficulty, measurement error, and measurement difficulty, and achieve the effect of improving production efficiency and accuracy
Active Publication Date: 2013-07-31
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
from figure 1 It can be seen from the figure that the pattern 102 to be measured has the same shape as its surrounding patterns, and because its size is very small and very close to the surrounding patterns, it is difficult to measure 102 with CDSEM, and measurement errors are prone to occur. Happening
Likewise, 103 is smaller than 102, making it more difficult to measure accurately
Method used
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[0031] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0032] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to illustrate how the method of the present invention enhances the recognizability of the pattern to be measured. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.
[0033] refer to Figu...
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Abstract
The invention provides a method for enhancing identifiability of a pattern requiring measurement for a critical dimension scanning electronic microscope (CDSEM). The method comprises the following steps: selecting a shape of an assistant pattern and determining a dimension of the assistant pattern; determining a block on a photomask, wherein the pattern requiring measurement is located in the block; positioning the assistant pattern near the block; making the assistant pattern on the photomask; carry out exposing for the photomask. According to the method provided by the present invention, undistinguishable patterns on wafer can be automatically measured, and identifiability of the pattern is improved, such that measuring accuracy is raised, downtime is decreased and waste of human resources is reduced.
Description
technical field [0001] The present invention relates to a semiconductor manufacturing process, in particular to a method for enhancing the visibility of a pattern to be measured for a critical dimension scanning electron microscope (Critical Dimension Scanning Electronic Microscope, CDSEM). Background technique [0002] In the manufacturing process of integrated circuits, generally speaking, photoresist is coated on the surface of the wafer first. The photoresist is then exposed through a photomask. A post-exposure bake is then performed to modify the physical properties of the photoresist. Afterwards, after development inspection (After Development Inspection, ADI) was carried out. The main step of post-development inspection is to measure the critical dimension (CD) of the photoresist pattern to determine whether it meets the specification. If specifications are met, an etch process is performed to transfer the photoresist pattern onto the wafer. [0003] However, with...
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IPC IPC(8): G03F1/44G03F9/00G01B15/00
Inventor 刘思南郝静安
Owner SEMICON MFG INT (SHANGHAI) CORP