Method for producing grid of semiconductor device

Abstract

The invention discloses a method for producing a grid of a semiconductor device, comprising the steps of: sequentially forming a grid oxide layer, a grid material layer, a finishing layer, an anti-reflecting coating layer and a photoresist layer with patterns on a front end device layer; etching the anti-reflecting coating layer by using the photoresist layer with the patterns as a mask to exposethe upper surface of the finishing layer; primarily etching the finishing layer by using first etching gas containing oxygen to form an opening with a depth as 10-70% of thickness of the finishing layer; slightly adjusting the size of the opening by using second etching gas containing oxygen, and etching the remainder finishing layer to form a finishing layer with patterns, wherein the slight adjustment is performed by controlling the flow speed of the oxygen in the second etching gas; and sequentially etching the grid material layer and the grid oxide layer by using the finishing layer with the patterns as a mask to form a grid. By using the method disclosed by the invention, the mask finishing technique can be performed in a larger technique window; and the same key size uniformity can be obtained.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a gate of a semiconductor device. Background technique [0002] At present, with the development of ultra-large-scale integrated circuits, the circuit design size is getting smaller and smaller, especially in the technology node below 45nm, the change of the critical dimension (CD, Critical Dimension) of the circuit has more and more influence on the performance of the device. Large, such as changes in the critical dimensions of the circuit will directly lead to changes in the operating speed of the device. [0003] Due to the impact of the resolution limit of the exposure machine (optical exposure too1), the optical proximity effect (OPE, Optical Proximity Effect). The optical proximity effect originates from the fact that when the circuit patterns with very close pitches on the mask plate are transferred to the photoresist of the semiconducto...

AI Technical Summary

Problems solved by technology

[0013] Due to the above-mentioned defects in the traditional process of trimming the mask by controlling the trimming time, an improved process method is needed, which can effectively solve the difference in the uniformity of critical dimensions caused by the difference in controlling the trimming time and the difference in the full pitch range on the wafer. The etch CD deviation range does not meet the process requirements, so that the mask trimming process can be performed within a larger process window and the same critical dimension uniformity can be obtained between different wafers

Images