Method for testing thermal boundary resistance between different materials by utilizing DC source
A technology of boundary thermal resistance and DC source, applied in the direction of thermal development of materials, preparation of test samples, etc., can solve the problems of expensive experimental equipment, increased difficulty of testing, hindering the research of boundary thermal resistance, etc., and meets the requirements of simple equipment , a wide range of applications, and low-cost testing effects
Inactive Publication Date: 2011-10-19
PEKING UNIV
View PDF5 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the test method for boundary thermal resistance is still limited to the TDTR (Time-domian thermoreflectance) method, or its derived method
The experimental equipment used in these methods is relatively expensive, and there are certain restrictions on the selection of test materials, which seriously hinders people's research on boundary thermal resistance.
Especially with the continuous reduction of device feature scale, the difficulty of testing is gradually increasing
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0027] The following describes the present invention in detail with reference to the accompanying drawings and specific embodiments, and provides a DC source method, which adopts differential thinking and uses a special structure to realize the test of boundary thermal resistance between thin layers of different materials.
[0028] 1. Formation process steps of test structure
[0029] 1. The substrate is a polysilicon substrate. The substrate is divided into two positions from the middle to the left and right, and the deposition thickness is of silica.
[0030] 2. Continue to deposit on the silicon dioxide layer Polysilicon, and the left side is etched away, and the left and right positions on the silicon dioxide layer are left with a thickness of thick polysilicon.
[0031] 3. The deposition thickness is of silica, which is then ground flat by the CMP process, making The thickness left above the polysilicon is of silica;
[0032] 4. Deposition The metal layer i...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a method for testing thermal boundary resistance between different materials by utilizing a DC source. The method specifically comprises the following steps of: constructing a special testing structure; testing a difference between the overall thermal resistance of a sample 2 (Y2) and the overall thermal resistance of a sample 1 (Y1) in the testing structure by using a DC method; calculating the thermal boundary resistance between materials A and B; and changing the input power of DC power, repeating the steps for N times to obtain N thermal boundary resistance values,and calculating an arithmetic mean value of the N thermal boundary resistance values as the thermal boundary resistance of the materials A and B. By the method provided by the invention, the thermal boundary resistance between different material thin layers can be simply, conveniently and effectively tested, requirements on apparatuses and equipment are simple, and testing results directly function in guiding the designing of semiconductor devices; and the method is convenient and easy to operate, low in testing cost and wide in application range.
Description
technical field [0001] The invention relates to a method for testing boundary heat resistance, in particular to a method for testing boundary heat resistance between thin layers of different materials. Background technique [0002] With the continuous development of the semiconductor industry, people have paid more and more attention to the research on the thermal characteristics of materials, especially with the continuous reduction of device feature size, the influence of the heat generated in the device on the device characteristics More and more serious, greatly restricting the development of the semiconductor industry. Therefore, in recent years, people have systematically studied the heat dissipation of semiconductor device materials, including the research on the thermal conductivity of single nanowires, the research on the thermal conductivity of thin films, and the research on the thermal conductivity of the whole device, etc. However, the research on the boundary ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/20G01N1/28
Inventor 黄如林增明黄欣孙帅
Owner PEKING UNIV