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Scanning film figure laser transfer method
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Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of thin film graphics and laser transfer, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of complex process and high cost, and achieve the effect of simple process and low cost
Inactive Publication Date: 2013-04-24
HARBIN INST OF TECH
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[0004] The purpose of the present invention is to solve the problem of high cost and complicated process that requires pre-processing multi-layer reticles in the existing thin film device or circuit preparation process, and then provides a scanning thin film pattern laser transfer method
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specific Embodiment approach 1
[0015] Specific implementation mode one: combine figure 1 , figure 2 , image 3 and Figure 4 To illustrate this embodiment, the specific steps of the scanning thin film pattern laser transfer method of this embodiment are:
[0016] Step 1, the transition layer film 1 is fabricated on the lower surface of the transparent source substrate 2 by sputtering, evaporation, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy;
[0017] Step 2, making the source film 3 on the lower surface of the transition layer film 1 by sputtering, vapor deposition, electroplating, brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxy, the transition layer film 1 Form a film material layer 7 with the source film 3;
[0018] Step 3, setting the transparent source substrate 2 above the target substrate 4, and the transparent source substrate 2 and the target substrate 4 are arranged in parallel...
specific Embodiment approach 2
[0024] Specific implementation mode two: combination figure 1 To illustrate this embodiment, in step 1 of this embodiment, the thickness of the transition layer thin film 1 is 0.05 microns to 10 microns, so that it can be evaporated quickly by heat and protect the source film 3 . Other steps are the same as in the first embodiment.
specific Embodiment approach 3
[0025] Specific implementation mode three: combination figure 1 Describe this embodiment, the transition layer film 1 in step 1 of this embodiment is a metal film or a low-temperature evaporation film, in order to realize the transition connection between the transparent source substrate 2 and the source film 3, or when the source film 3 is a heat-sensitive material, protect the The source film 3 is not burned by the laser. Other steps are the same as those in Embodiment 1 or 2.
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Abstract
Provided is a scanning film figure laser transfer method. The invention relates to a film figure laser transfer method. The invention solves the problems that it is necessary to process a multilayer mask plate in the preparation process of a thin-film device or circuit and the process is characterized by high cost and complex operation. The invention has the following steps: a transition layer film and a source film are prepared on a transparent source substrate through the procedures of sputtering, vapor plating, electroplate, brush plating brush plating, spin coating, chemical vapor deposition, plasma plating or molecular beam epitaxial in order and the transition layer film and the source film form a thin film material layer; the transparent source substrate is arranged above a target substrate and the vertical distance between the transparent source substrate and the target substrate is 0 to 5 millimeters; a laser beam penetrates the transparent source substrate and irradiate on the transition layer film; the thin film material layer evaporates due to heats and disengages from the transparent source substrate; the disengaged transparent source substrate bumps into the target substrate to form a target film and figure on the surface of the target substrate. The invention is suited for thin-film device or circuit preparation.
Description
technical field [0001] The invention relates to a laser transfer method of thin film graphics, in particular to a scanning laser transfer method of thin film graphics, which belongs to the technical field of thin film device and circuit manufacturing. Background technique [0002] Thin film materials can be used to make thin film devices, circuits, etc. in the field of electronic packaging. Its characteristic is that it requires high manufacturing precision, and the line width and spacing of thin film graphics need to reach the micron level, or even higher precision. Thin-film devices and circuits composed of thin-film patterns can include conductors, resistors, capacitors, inductors, and optoelectronic devices. In some specific applications, thin-film patterns or devices need to be made into multi-layer thin-film structures. [0003] Due to the characteristics of high interconnection density, high integration, small size, and light weight, thin-film devices and circuits ar...
Claims
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Application Information
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