Strain engineered composite semiconductor substrates and methods of forming same

A composite substrate and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as degradation and difficult film growth

Active Publication Date: 2011-11-16
SOITEC SA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, films with an indium content greater than 7% are difficult to grow thick (i.e. >500nm) because the film may phase separate and thus be degraded by lattice mismatch induced strain effects

Method used

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  • Strain engineered composite semiconductor substrates and methods of forming same
  • Strain engineered composite semiconductor substrates and methods of forming same
  • Strain engineered composite semiconductor substrates and methods of forming same

Examples

Experimental program
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Embodiment approach

[0094] As a first example, an InGaN (or GaN) donor structure is formed. The example basically follows the Figure 3A-3G Actions and structures shown in . In this example, a sapphire growth substrate 110 was used. ZnO is deposited as a buffer layer 120 on the sapphire growth substrate 110 by means of, for example, MOVPE, HVPE or MBE.

[0095] On the surface of the ZnO buffer layer 120, lattice-matched In 0.18 Ga 0.82 N or strained GaN. The thickness of the nitride material can be kept below a critical thickness to prevent defect formation in the case of strained Ill-nitride material growth.

[0096] Use SiO 2 A sapphire carrier substrate 150 is bonded as a bonding layer to the surface of the strained Ill-nitride material 130 opposite the sapphire growth substrate 110 . Bonded structures can be strengthened by means of thermal annealing and / or using plasma activation as a pre-bonding surface treatment.

[0097] The back surface of the buffer layer 120 can be exposed by r...

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Abstract

Composite substrates are produced that include a strained Ill-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the Ill-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The Ill-nitride material may be formed with a Ga polarity or a N polarity. The desired lattice strain may be developed by forming a buffer layer between the Ill-nitride material and a growth substrate, implanting a dopant or introducing an impurity in the Ill-nitride material to modify its lattice parameter, or forming the Ill-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.

Description

technical field [0001] The present invention generally relates to the fabrication of engineered substrates for use in the fabrication of semiconductor structures or devices, intermediate structures formed in the fabrication of semiconductor structures or devices, and semiconductor structures or devices using engineered substrates . Background technique [0002] A variety of semiconductor structures and devices are formed using substrates comprising one or more layers of semiconductor material, including, for example, integrated circuit (IC) devices such as logic processors and memory devices, radiation emitting devices such as light emitting diodes (LEDs) ), resonant cavity light emitting diodes (RCLEDs) and vertical cavity surface emitting lasers (VCSELs)) and radiation sensing devices (such as optical sensors). The semiconductor devices are conventionally formed on and / or in the surface of the semiconductor substrate in a layer-by-layer manner (ie, photolithographically)....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L33/00H01L21/20
CPCH01L21/76254H01L33/007H01L33/0079H01L33/0093H01L21/20
Inventor 法布里斯·勒泰特J-M·贝斯奥谢艾丽丝·布萨戈尔
Owner SOITEC SA
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