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Manufacturing methods of thin film transistor matrix substrate and display panel

A technology for thin film transistors and matrix substrates is applied in the field of manufacturing thin film transistor matrix substrates and display panels to achieve the effects of reducing process cost, reducing influence, and reducing process cost and time.

Active Publication Date: 2014-01-22
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a manufacturing method of a thin film transistor matrix substrate and a display panel to solve the problem of TFT manufacturing process

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  • Manufacturing methods of thin film transistor matrix substrate and display panel
  • Manufacturing methods of thin film transistor matrix substrate and display panel
  • Manufacturing methods of thin film transistor matrix substrate and display panel

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Embodiment Construction

[0039] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.

[0040] In the figures, structurally similar units are denoted by the same reference numerals.

[0041] Please refer to figure 1 , which shows a schematic cross-sectional view of a display panel and a backlight module according to an embodiment of the present invention. The manufacturing method of the thin film transistor (TFT) matrix substrate of this embodiment can be applied in the manufacturing process of the display panel 100 (such as a liquid cry...

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Abstract

Provided is a method for manufacturing a thin film transistor matrix substrate and a display panel. The method comprises the steps of: forming a gate (112), a gate insulation layer (113), a semiconductor layer (114), an ohmic contact layer (115), an electrode layer (116) and a first photoresist layer (101) sequentially on a transparent substrate (111); patterning the first photoresist layer; etching the ohmic contact layer (115) and the electrode layer (116); coating a second photoresist layer (102) on the patterned first photoresist layer (101) and in a trench; removing the second photoresist layer (102) from the patterned first photoresist layer (101) and retaining the second photoresist layer (102) in the trench; etching the semiconductor layer (114), and removing the patterned first photoresist layer (101) and second photoresist layer (102); forming a protective layer on the trench, a source electrode (116b) and a drain electrode (116a); and forming a pixel electrode on the protective layer. In this way, the number of photomasks in the manufacturing process can be reduced, and wet etching only needs to be performed on the metal once.

Description

【Technical field】 [0001] The invention relates to the technical field of thin film transistor manufacturing, in particular to a manufacturing method of a thin film transistor matrix substrate and a display panel. 【Background technique】 [0002] Liquid Crystal Displays (LCDs) have been widely used in various electronic products. Most of the LCDs are backlight LCDs, which are composed of a liquid crystal display panel and a backlight module. A general liquid crystal display panel includes a color filter (Color Filter, CF) substrate and a thin film transistor (Thin Film Transistor, TFT) matrix substrate. Multiple color filters and common electrodes are arranged on the CF substrate. A plurality of scanning lines parallel to each other, a plurality of data lines parallel to each other, a plurality of thin film transistors and pixel electrodes are arranged on the TFT matrix substrate, wherein the scanning lines are perpendicular to the data lines, and two adjacent scanning lines ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77G02F1/1362G02F1/1368
CPCG02F1/1368G02F1/1362H01L29/66765H01L27/12H01L21/84G02F2001/136231G02F1/136231
Inventor 薛景峰许哲豪姚晓慧
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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