Oxide semiconductor thin film transistor and preparing method thereof

Abstract

An oxide semiconductor thin film transistor structure includes a substrate, a gate electrode disposed on the substrate, a semiconductor insulating layer disposed on the substrate and the gate electrode, an oxide semiconductor layer disposed on the semiconductor insulating layer, a patterned semiconductor layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode respectively disposed on the patterned semiconductor layer. The source electrode and the drain electrode are made of a metal layer.

Description

technical field [0001] The invention relates to an oxide semiconductor thin film transistor structure and a manufacturing method thereof, in particular to an oxide semiconductor thin film transistor structure with a patterned semiconductor layer and a manufacturing method thereof. Background technique [0002] In recent years, thin film transistors using an oxide semiconductor as a channel offer an alternative to thin film transistors using conventional silicon channels. Since oxide semiconductor thin film transistors have the electrical characteristics of high carrier mobility of low-temperature polysilicon semiconductor thin film transistors and the high electrical uniformity of amorphous silicon semiconductor thin film transistors, liquid crystal displays using oxide semiconductor thin film transistors have gradually become the market mainstream products. [0003] Please refer to figure 1 , figure 1 A schematic cross-sectional view showing the structure of an existing ...

AI Technical Summary

Problems solved by technology

However, when the source electrode 151 and the drain electrode 152 are etched in the existing oxide semiconductor thin film transistor 10, the oxide semiconductor layer 14 located below the source electrode 151 and the drain electrode 152 is often broken due to the erosion of the metal etchant. When the line or electrical subthreshold swing S.S (subthresho1d swing) is not good

Therefore, the problem that the oxide semiconductor layer 14 of the existing oxide semiconductor thin film transistor structure 10 is easily corroded by the metal etchant needs to be further improved.

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