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Wavelength beam combining mirror device realizing Brewster angle incidence

A Brewster angle and beam combiner technology, applied in the field of semiconductor lasers, can solve the problems of difficult coating and low beam combining efficiency, and achieve the effects of reducing coating difficulty, improving beam combining efficiency, and reducing processing costs

Active Publication Date: 2013-11-27
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above situation, in order to solve the defects of the prior art, the object of the present invention is to provide a wavelength beam combiner device incident at the Brewster angle, which can effectively solve the shortcomings of difficult coating and low beam combining efficiency

Method used

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  • Wavelength beam combining mirror device realizing Brewster angle incidence
  • Wavelength beam combining mirror device realizing Brewster angle incidence

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Embodiment 1

[0018] Embodiment 1: There are two stacks of semiconductor lasers, the output power of each stack is 600W, the output wavelengths are 808nm and 880nm respectively, and both are output in TE mode.

[0019] The substrate of the wavelength beam combiner is K9, the thickness D is 3mm, and the 880nm laser is selected as the transmitted light of the first laser, and the 808nm laser is reflected as the reflected light of the second laser. When the wavelength is 880nm, the refractive index of K9 is 1.509. According to Brewster's angle formula tan θ B1 =n 2 / n 1 Available, θ B1 = θ B2 =56.5°, L=1.4mm, then the coating requirement of the dichroic film is 880nm antireflection and 808nm high reflection under the condition of incident angle of 56.5°, and the values ​​are set as 95% and 99% respectively.

[0020] Beam combining process: Firstly, each stack is collimated by fast and slow axis collimator mirrors, and each optical surface of the collimator mirrors is coated with an anti-re...

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Abstract

The invention relates to the field of a semiconductor laser, in particular to a wavelength beam combining mirror device realizing Brewster angle incidence, which comprises a first laser, a first collimation system, a wavelength beam combining mirror, a second collimation system and a second laser, wherein one surface of a wavelength beam combining mirror is a film coating surface, the other side of the wavelength beam combining mirror is not the film coating surface, the non-film-coating surfaces of the first laser, the first collimation system and the wavelength beam combining mirror are positioned at the same side, the film coating surfaces of the second laser, the second collimation system and the wavelength beam combining mirror are positioned at the same side, an included angle theta B1 between the optical axis of the first collimation system and the normal line of the wavelength beam combining mirror is the same as the included angle theta B2 between the optical axis of the second collimation system and the normal line of the wavelength beam combining mirror. The wavelength beam combining mirror device has the advantages that the film coating difficulty is low, the film layer number is small, the corresponding stress is small, the transmission light realizes the Brewster angle incidence, the plating of any film is not needed at the incidence side, in addition, the transmission rate is theoretically 100 percent when the P light realize the Brewster angle incidence, the processing cost is reduced, and simultaneously, the beam combining efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a wavelength beam combining mirror device incident at a Brewster angle. Background technique [0002] Limited by the output power of a single semiconductor laser, high-power semiconductor lasers must be implemented with multiple unit devices through multiple couplings, mainly including spatial beam combining, polarization combining and wavelength combining. The general method is to stack multiple unit devices in space to form a single-wavelength linearly polarized laser output sub-module with a large output power, and then use polarization beam combining to obtain a single-wavelength module with twice the power and power density, and finally Then, wavelength combining is used to finally obtain a wide-spectrum semiconductor laser light source with several times higher power and power density. The disadvantages of this method: 1. The dichroic film coated on the wavelength beam ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B27/28G02B1/10G02B27/30
Inventor 张俊彭航宇王立军尹宏贺单肖楠
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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