Method for manufacturing automatic temperature-limiting oxide electric-heating film

Abstract

The invention relates to a method for manufacturing an automatic temperature-limiting oxide electric-heating film, which comprises the following processes of: preparing a film-forming solution, purifying substrates, film forming, manufacturing electrodes and electrifying and aging. The method is characterized in that: according to the formulation of the film-forming solution, tin tetrachloride (100g) is a major ingredient; antimony trichloride (1.8g) is a doping agent; copper dichloride (1.7g) and manganous dichloride (2g) are high-temperature anti-aging agents; barium titanate (5g) is a stabilizing agent with high-pressure resistance; hydrofluoric acid (suitable amount) is a doping dissolvent agent; and absolute ethyl alcohol (100g) is a solvent. The method for manufacturing the automatic temperature-limiting oxide electric-heating film has the advantages that: the formulation is optimized and the best use of everything is made; antimony and fluorine are co-doped, thus the quality ofa film layer is enhanced; the copper dichloride and the manganous dichloride are selected as additives, thus the anti-aging performance of the film layer is increased; the barium titanate with characteristics is selected as an additive, so that the stability of resistance under high pressure is protected and the film layer has an automatic temperature-limiting performance, slow attenuation under high temperature, a long service, good conductivity and stability and strong adaptability. The method for manufacturing the automatic temperature-limiting oxide electric-heating film is suitable for manufacturing oxide electric-heating films.

Description

technical field [0001] The invention belongs to an ohmic resistance heating film characterized by materials or material properties, in particular to a method for manufacturing an oxide electric heating film with self-limiting temperature performance. Background technique [0002] Transparent conductive oxide materials are an important member of the semiconductor family. Because of their good photoelectric and energy-saving effects, their application prospects are more important and extensive. Commonly used transparent conductive oxide films mainly include: SnO 2 、In 2 o 3 , ZnO, Cd 2 InO 4 And its doping system, their common disadvantages are poor high temperature stability, fast attenuation, and short life, which limits the scope of use. Chinese patent application number: 200710119631.5 "Production method with self-constant temperature transparent high-temperature electric heating film tube" proposes to mix tin, antimony, copper, nickel chloride and ethanol in a weight...

AI Technical Summary

Problems solved by technology

When the doping amount reaches a certain critical value, the electron concentration tends to a saturation value. If the doping level continues to increase, foreign impurities will react with oxygen in the film to form a non-conductive second phase, resulting in a sharp drop in electron mobility.

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