Plasma processing apparatus, substrate holding mechanism, and positional deviation detection method

Abstract

The invention provides a plasma processing apparatus, a substrate holding mechanism, and a method for the substrate position deviation detection. The influence of the pressure loss of a gas flow path of a heat transfer gas can be eliminated, and the precision of the substrate position deviation detection is also improved. The plasma processing apparatus is provided with the gas flow path (352) of the gas from a gas supply source. And the gas flow path is arranged between to-be-processed substrates kept on a substrate keeping surface and gives the gas to a carrying platform (300). The substrate keeping surface formed on the carrying platform introduces the gas from the gas flow path into a plurality of pores (354) in the substrate keeping surface (Ls). A plurality of pressure detecting holes (370a to 370 d) which are used to detect the pressure on a rear side of the substrate are formed at the outside of a pore forming area (R) of the substrate keeping surface. Pressure sensors (380a to 380 d) which are connected with the pressure detecting holes are also included. The substrate position deviation detection is carried out based on the detection pressure of the pressure sensors.

Description

technical field [0001] The present invention relates to a plasma processing apparatus, a substrate holding mechanism, and a method for detecting a positional deviation of a substrate for performing plasma processing on a large substrate such as a glass substrate for a flat panel display (FPD). Background technique [0002] In FPD panel manufacturing, pixel designs, electrodes, wiring, etc. are generally formed on a substrate made of an insulator such as glass. Among various processes of such panel production, microprocessing such as etching, CVD, ashing, and sputtering is performed by a plasma processing apparatus. In a plasma processing apparatus, for example, a substrate is placed on a stage having a susceptor constituting a lower electrode in a decompressible processing chamber, and high-frequency power is supplied to the susceptor to form plasma of a processing gas on the substrate. This plasma performs predetermined processing such as etching on the substrate. [0003...

AI Technical Summary

Problems solved by technology

In this method, for example, when there is no semiconductor wafer or the electrostatic holding force is small, the pressure measurement gas leaks from the pressure measurement hole and the pressure drops. Therefore, by monitoring the pressure, it is possible to detect the presence of the semiconductor wafer on the mounting table. None and hold state, but cannot detect the positional deviation of the semiconductor wafer

The technique described in Patent Document 2 also provides a pressure measurement hole on the upper part of the mounting table to detect pressure, but it cannot detect positional displacement similarly to the above.

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