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Plasma processing apparatus, substrate holding mechanism, and method for substrate position deviation detection

A substrate holding and offset detection technology, which is applied in the direction of using fluid devices, measuring devices, semiconductor/solid-state device testing/measurement, etc., can solve the problems of inability to detect position offset, inability to detect semiconductor wafer position offset, etc. , to achieve the effect of improving the detection accuracy of position deviation and eliminating pressure loss

Active Publication Date: 2014-09-03
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this method, for example, when there is no semiconductor wafer or the electrostatic holding force is small, the pressure measurement gas leaks from the pressure measurement hole and the pressure drops. Therefore, by monitoring the pressure, it is possible to detect the presence of the semiconductor wafer on the mounting table. None and hold state, but cannot detect the positional deviation of the semiconductor wafer
The technique described in Patent Document 2 also provides a pressure measurement hole on the upper part of the mounting table to detect pressure, but it cannot detect positional displacement similarly to the above.

Method used

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  • Plasma processing apparatus, substrate holding mechanism, and method for substrate position deviation detection
  • Plasma processing apparatus, substrate holding mechanism, and method for substrate position deviation detection
  • Plasma processing apparatus, substrate holding mechanism, and method for substrate position deviation detection

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Embodiment Construction

[0039] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. In addition, in this specification and drawings, the same code|symbol is attached|subjected to the component which has substantially the same functional structure, and repeated description is abbreviate|omitted.

[0040] (Example of structure of plasma processing apparatus)

[0041] First, an embodiment in which the present invention is applied to a multi-chamber processing apparatus having a plasma processing apparatus will be described with reference to the drawings. figure 1 It is an external perspective view of the processing apparatus 100 of this embodiment. The processing apparatus 100 shown in this figure has three plasma processing apparatuses for performing plasma processing on the substrate for flat panel display (substrate for FPD) G. Each plasma processing apparatus has a processing chamber 200 .

[0042] In the processing chamber 200, for exa...

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Abstract

PROBLEM TO BE SOLVED: To enhance detection precision of a position shift of a substrate by eliminating an effect of pressure loss in a gas passage for heat transfer gas.SOLUTION: There are provided a gas passage 352 for supplying gas from a gas supply source therethrough to the gap between a mount table 300 and a processing target substrate held on a substrate holding surface of the mount table 300, plural gas holes 354 formed in the substrate holding surface of the mount table to guide the gas from the gas passage onto a substrate holding surface Ls, plural pressure detecting holes 370a to 370b formed at the outside of a gas hole forming area R in the substrate holding surface to detect a pressure applied to the back surface of the substrate, and pressure sensors 380a to 380d connected to the pressure detecting holes. A position shift of the substrate is detected on the basis of the detected pressure from the pressure sensors.

Description

technical field [0001] The present invention relates to a plasma processing apparatus, a substrate holding mechanism, and a method for detecting a positional deviation of a substrate for performing plasma processing on a large substrate such as a glass substrate for a flat panel display (FPD). Background technique [0002] In FPD panel manufacturing, pixel designs, electrodes, wiring, etc. are generally formed on a substrate made of an insulator such as glass. Among various processes of such panel production, microprocessing such as etching, CVD, ashing, and sputtering is performed by a plasma processing apparatus. In a plasma processing apparatus, for example, a substrate is placed on a stage having a susceptor constituting a lower electrode in a decompressible processing chamber, and high-frequency power is supplied to the susceptor to form plasma of a processing gas on the substrate. This plasma performs predetermined processing such as etching on the substrate. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01L21/00G01B13/00H01L21/66
CPCH01J37/32715H01L21/67017H01L21/67253H01L21/687H01L22/12
Inventor 东条利洋古屋敦城
Owner TOKYO ELECTRON LTD
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