Solid-state imaging device and camera system

A solid-state imaging device and device technology, which can be used in TV system components, electrical components, image communication, etc., and can solve problems such as image quality degradation

Inactive Publication Date: 2012-01-11
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the image quality deteriorates significantly

Method used

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  • Solid-state imaging device and camera system
  • Solid-state imaging device and camera system
  • Solid-state imaging device and camera system

Examples

Experimental program
Comparison scheme
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no. 1 example

[0045] 1. First embodiment (first exemplary configuration of CMOS image sensor (solid-state imaging device))

[0046] 2. Second embodiment (second exemplary configuration of CMOS image sensor (solid-state imaging device))

no. 3 example

[0047] 3. Third embodiment (third exemplary configuration of CMOS image sensor (solid-state imaging device))

[0048] 4. Fourth Embodiment (Exemplary Configuration of Camera System)

[0049]

[0050] figure 1 Is a diagram illustrating an exemplary configuration of a CMOS image sensor (solid-state imaging device) according to the first embodiment of the present disclosure.

[0051] The CMOS image sensor 100 has a pixel portion 110, an address decoder 120, a latch (memory) control circuit 130, a pixel drive timing control circuit 140, a sensor controller 150, and a readout circuit (AFE) 160.

[0052] The address decoder 120, the memory control circuit 130, the pixel driving timing control circuit 140, and the sensor controller 150 constitute a pixel driving part.

[0053] In this embodiment, the address decoder 120, the memory control circuit 130, and the pixel drive timing control circuit 140 constitute a row (vertical) selection circuit 170.

[0054] The vertical selection circuit 170 is...

no. 2 example

[0187] Picture 11 It is a diagram illustrating an example of a pixel drive timing control circuit and a memory control circuit of the vertical (row) selection circuit of the CMOS image sensor (solid-state imaging device) according to the second embodiment.

[0188] In the second embodiment, the circuit configuration is basically the same as that of the first embodiment.

[0189] Therefore, pixel drivers and other Figure 7 Or the same configuration as those of 8.

[0190] The second embodiment differs from the above-mentioned first embodiment in the following points. Such as Picture 11 As shown, the second memory (B memory) 132 of each row is reset as a whole by the B memory (latch) reset control signal BLatchRST.

[0191] in Picture 11 In the memory control circuit 130C, the AND gate AG134 is not arranged at the input stage of the reset terminal R of the second memory (B memory) 132, and directly provides the B memory (latch) reset control signal BLatchRST.

[0192] In the case of ...

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Abstract

A solid-state imaging device includes: a pixel section wherein pixels including photoelectric conversion devices are arranged in a matrix; and a pixel driving section including a row selection circuit which controls the pixels to perform an electronic shutter operation and readout of the pixel section. The row selection circuit has a function of selecting a readout row from which a signal is read out and a shutter row on which reset is performed by discharging charge accumulated in the photoelectric conversion devices, in accordance with address and control signals. The row selection circuit can set, in accordance with the address and control signals, in the pixels of the selected row, at least a readout state, a discharge state where a smaller amount of the charge accumulated in the photoelectric conversion devices than the reset is discharged, an electronic shutter state, and a charge state where the charge is accumulated in the photoelectric conversion devices.

Description

Technical field [0001] The present invention relates to a solid-state imaging device and a camera system. Background technique [0002] Compared with a CCD (Charge Coupled Device) image sensor, a CMOS (Complementary Metal Oxide Semiconductor) image sensor (CIS) is characterized in that it is possible to set a readout address relatively freely. [0003] For example, its widely used sensor is a sensor that not only has the function of reading out all pixels of the sensor, but also has the "addition" that reads out the signals of multiple pixels at the same time. Functions such as "thinning-out" that reads out the signal intermittently at the same time, and "cutout" that reads only from some pixels. [0004] Sometimes "addition", "dilute" and "cut" can be executed simultaneously. [0005] In a sensor with functions of "addition", "dilute" and "cut", readout and shutter operations become complicated. Therefore, in most cases, for row selection, a decoder is used instead of a shift regis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/374H04N5/3745H04N5/378H04N5/225
CPCH04N5/3591H04N5/347H04N5/376H04N5/374H04N25/571H04N25/46H04N25/621H04N25/74H04N25/76H01L27/146H04N25/62H04N25/53
Inventor 牧野荣治中世古哲司浴良仁崎冈洋司
Owner SONY CORP
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