Novel SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit structure of double transistor and operation method thereof

Abstract

The invention relates to a novel SONOS (Silicon Oxide Nitride Oxide Semiconductor) flash memory unit structure of a double transistor and an operation method thereof. The SONOS flash memory unit structure of the double transistor comprises an SONOS memory transistor and a memory unit selectron, wherein a selecting grid of the memory unit selectron is used as a selecting end; a drain region close to one side of the grid of the memory unit selectron is a bit line end while a source region close to one side of the SONOS memory transistor is used as a source line end; and a control grid of the SONOS memory transistor is a control end. The operation method of the SONOS memory unit of the double transistor comprises the steps of selecting the unit in reading and writing operation by using the bit line end and the selecting end and selecting the unit in erasing operation by using the control end. The novel SONOS flash memory unit structure of the double transistor, provided by the invention, is completely compatible with a standard CMOS logic process; and the over-erasing shortcoming of a single flash memory transistor memory unit are overcome.

Description

technical field [0001] The invention relates to an integrated circuit, in particular to a novel dual-transistor SONOS flash storage unit structure and an operation method thereof. Background technique [0002] Flash memory is a type of non-volatile memory that can be electrically erased and reprogrammed. Flash memory is erased and edited in blocks, where each block includes multiple memory cells. Each memory cell includes a floating-gate metal-oxide-semiconductor transistor for storing information. Each floating-gate MOS transistor stores one or more bits of data. One type of flash memory is polysilicon floating gate flash memory. Polysilicon floating gate flash memory is used for tunnel injection for writing data into memory cells and tunnel release for erasing data from memory cells. Flash memory is accessed as a block device. [0003] Another type of non-volatile memory is charge trapping memory, specifically Semiconductor-Oxide-Nitride-Semiconductor (SONOS) floating...

AI Technical Summary

Problems solved by technology

However, the erasing of the SONOS storage unit of a single transistor is to use the substrate to erase the entire chip, or to erase the sub-blocks of the memory. The SONOS storage unit of the single transistor has the disadvantage of over-erasing, which requires peripheral circuits to perform erasure. complex erasure verification

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