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Fabrication of compact opto-electronic component packages

A technology of packages and components, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as inflexible design changes, difficulties in specific application design, and large mechanical tolerances

Inactive Publication Date: 2012-03-21
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These types of packages usually have larger footprints, poor thermal conductivity, and larger mechanical tolerances, and are less flexible in terms of design changes, thus making it difficult to design specific applications.

Method used

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  • Fabrication of compact opto-electronic component packages
  • Fabrication of compact opto-electronic component packages
  • Fabrication of compact opto-electronic component packages

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Figure 1a and Figure 1b Examples of thin LED packages 100 and 150 with enhanced thermal characteristics 100 and 150 are shown. Although Figure 1a and Figure 1b It is described relative to a light emitting diode 108, but the light emitting diode 108 can be replaced by other types of optoelectronic components. For example, in some applications, the LED 108 can be an infrared emitter (such as a vertical cavity surface emitting laser), an infrared receiver (such as a pin diode) or an infrared transceiver (infra-red transceiver). replace. Likewise, the manufacturing process described below can be used for the manufacture of encapsulations for optoelectronic components other than light-emitting diodes.

[0032] The LED package 100 includes a substrate 102, a reflector 104, a conductive metallization 106, a reflective surface 107, an LED 108, an LED die attach pad 110a (located below the LED 108) and The wire bonding pads 110b. In the illustrated example, substrate 10...

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PUM

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Abstract

A wafer-level method of fabricating an opto-electronic component package, in which the opto-electronic component is mounted to a semiconductor wafer (175) having first and second surfaces (118, 119) on opposite sides of the wafer. The method includes etching vias (122) in the first surface (118) of the semiconductor wafer. The first surface and surfaces in the vias are metallized, and the metal is structured to define a thermal pad (124) and to define the anode and cathode contact pads (126). A carrier wafer (130) is attached on the side of the semiconductor wafer having the first surface (118), and the semiconductor wafer is thinned from its second surface (119) to expose the metallization in the vias. Metal is provided on the second surface, and the metal is structured to define a die attach pad (HOa) and additional anode and cathode pads (HOb) for the opto-electronic component (108). The opto-electronic component is mounted on the die attach pad and a protective cover is formed over the opto-electronic component.

Description

technical field [0001] The invention relates to optoelectronic component encapsulations. Background technique [0002] The use of light emitting diodes (LEDs) in electronic products has continued to increase and in some cases has replaced traditional light sources such as light bulbs in today's applications. For example, LEDs are currently found in flashlights, car headlights, and backlight units for liquid crystal display screens. [0003] Such as alumina (Al 2 o 3 ) or aluminum nitride (AlN) ceramic materials have been used in the packaging of high-brightness light-emitting diodes. In addition to ceramic materials, plastic leadless chip carriers ("PLCCs") and other lead frame structures may also be used. These types of packages typically have larger footprints, poorer thermal conductivity, and larger mechanical tolerances, and are less flexible in terms of design changes, thus making application-specific design difficult. [0004] As the features and performance of cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/38H01L33/48H01L33/62
CPCH01L2924/3025H01L21/76898H01L2924/01019H01L23/481H01L2924/10253H01L2224/48227H01L33/38H01L24/48H01L2224/73265H01L2224/48465H01L33/486H01L33/382H01L2224/48091H01L33/62H01L2924/12041H01L2933/0016H01L2924/00014H01L2924/14H01L2924/181H01L2924/00H01L2224/45099H01L2224/45015H01L2924/207
Inventor 约亨·库曼
Owner EPISTAR CORP
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