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Manufacturing method of semiconductor device

A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Inactive Publication Date: 2012-04-04
ASAHI GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the opportunity to use support plates and double-sided adhesive sheets has increased

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0134] Hereinafter, although an Example etc. demonstrate this invention concretely, this invention is not limited to these examples.

[0135] Example

[0136] In the examples, as the support plate, the surface was cleaned by pure water washing and UV washing, with a diameter of 350mm, a plate thickness of 0.6mm, and a linear expansion coefficient of 38×10 -7 / °C non-alkali glass plate (manufactured by Asahi Glass Co., Ltd., AN 100).

[0137] Next, as a silicone resin composition, silicone for release paper was prepared. As silicone for release paper, a linear polyorganosiloxane (main ingredient, manufactured by Arakawa Chemical Industry Co., Ltd., "8500") having a vinyl group at both ends and a polyorganosiloxane having a hydrosilyl group in the molecule were prepared. Polymethylhydrogensiloxane (cross-linking agent, manufactured by Arakawa Chemical Industry Co., Ltd., "12031") and a platinum-based catalyst (manufactured by Arakawa Chemical Industry Co., Ltd., "CAT12070") ...

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PUM

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Abstract

The present invention provides a method for manufacturing a semiconductor device at high temperatures. The method for manufacturing the semiconductor device comprises: a first step of producing a first component part (21) of a semiconductor device (20) on a first surface (11) of a semiconductor wafer (10); a second step of laminating a support plate (40) to the first surface of the semiconductor wafer, on which the first component part (21) has been produced, through only a silicone resin layer (30) therebetween; a third step of grinding a second surface (12) opposing the first surface of the semiconductor wafer (10), in the state of the support plate (40) being laminated, and then producing a second component part (22) of the semiconductor device (20) on the ground surface (13); and a fourth step of peeling off the silicone resin layer (30) from the semiconductor wafer (10) on which the first component part (21) and the second component part (22) have been produced, thereby removing the silicone resin layer (30) and the support plate (40), and cutting the semiconductor wafer (10) into a chip.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor element. Background technique [0002] In the manufacturing process of semiconductor elements, after electronic circuits and the like are formed on the surface of a semiconductor wafer (hereinafter also simply referred to as "wafer"), backside grinding (so-called backgrind) of the wafer is sometimes performed in order to reduce the thickness of the wafer. In this case, for the purpose of protecting the circuit surface of the wafer, fixing the wafer, etc., a support plate is usually attached with a double-sided adhesive sheet interposed between the circuit surface of the wafer (for example, refer to Patent Document 1). [0003] If the support plate is attached to the circuit surface of the wafer, after the back surface of the wafer is ground, the thinned wafer can be strengthened, and a back electrode or the like can be formed on the ground surface of the wafer. Thereafter, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/321
CPCH01L21/6835H01L21/78H01L21/30
Inventor 樋口俊彦
Owner ASAHI GLASS CO LTD