Method for realizing radio frequency correlated noise on Gummel Poon model

Abstract

The invention discloses a model method for realizing radio frequency correlated noise on a Gummel Poon model, which comprises the following steps that: a base electrode of the Gummel Poon model is connected in series with a first noise source; a collecting electrode of the Gummel Poon model is connected in series with a second noise source; an emitting electrode of the Gummel Poon model is connected in series with a third noise source; the base electrode is connected in parallel with a fourth noise source; and the collecting electrode is connected in parallel with a fifth noise source and a sixth noise source. The first, second and third noise sources are noise voltage sources. The first noise source is used for simulating thermal noise generated by a base electrode parasitic resistance. The second noise source is used for simulating thermal noise generated by a collecting electrode parasitic resistance. The third noise source is used for simulating thermal noise generated by an emitting electrode parasitic resistance. The fourth, fifth and sixth noise sources are noise current sources. The fourth noise source is used for simulating shot noise generated by a base electrode current. The fifth and sixth noise sources are used for simulating shot noise generated by a collecting electrode current. Due to the adoption of the method, the simulation precision of radio frequency noiseof the Gummel Poon model is greatly improved, so that simulation data of the Gummel Poon model can be well in fit with test data.

Description

technical field [0001] The invention relates to a model method for semiconductor devices, in particular to a model method for realizing radio frequency correlation noise on a Gummel Poon model. Background technique [0002] Gummel Poon is a model for simulating bipolar transistors (BJT) developed by Berkeley University in the United States. The original version was released in 1990, and after several upgrades, it has now become the industry standard for bipolar transistors (BJT). Model. The model includes the extraction of bipolar transistor parasitic capacitance parameters, parasitic resistance parameters, nonlinear DC model parameters, small signal model parameters and temperature coefficient extraction. However, it does not consider the radio frequency correlation noise model, which is especially important at high frequencies, which brings difficulties and inconvenience to the design of radio frequency circuits, especially in the design of radio frequency circuit transce...

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Problems solved by technology

However, it does not consider the radio frequency correlation noise model, which is especially important at high frequencies, which brings difficulties and inconvenience to the design of radio frequency circuits, especially in the design of radio frequency circuit transceivers that require very high noise figures. , put forward the requirements and requirements for the radio frequency noise model, especially the noise model with correlation

At present, the Gummel Poon model itself does not implement a correlation noise model. Although some simulation software such as HSPICE, SPECTRE, etc. have added parasitic resistance thermal noise and shot noise to the Gummel Poon model, each noise source is independent. related; such as figure 1 As shown, the accuracy of the uncorrelated model is relatively poor

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