Unlock instant, AI-driven research and patent intelligence for your innovation.

CMOS image sensor pixel unit with high filling factor and pixel array work method thereof

An image sensor and pixel unit technology, applied in image communication, TV system parts, electrical components, etc., can solve the problems of sensitivity, signal-to-noise ratio fill factor degradation, etc., to achieve convenient control, improve fill factor, and simple structure Effect

Active Publication Date: 2013-11-06
PKU HKUST SHENZHEN HONGKONG INSTITUTION
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the increase of integration density and complexity of today's integrated circuits, reducing the pixel unit size has become the main driving force for the development and competition of CIS, but the degradation of sensitivity, signal-to-noise ratio, fill factor, etc. Here comes the big challenge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CMOS image sensor pixel unit with high filling factor and pixel array work method thereof
  • CMOS image sensor pixel unit with high filling factor and pixel array work method thereof
  • CMOS image sensor pixel unit with high filling factor and pixel array work method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This embodiment adopts the AMIS (On Semiconductor) CMOS technology and rules of 0.35um thickness size, so that each pixel unit only needs the 1T-APS test structure of one polysilicon layer and five metal layers, and each pixel unit plane size is 7um×7um.

[0037] The chip of this embodiment specifically adopts the simplest 1T-APS pixel array of 2×2 pixel units, and its equivalent circuit is as follows figure 2 As shown, the corresponding layout is as Figure 4 shown.

[0038] The circuit structure of each pixel unit of the pixel array chip, the equivalent circuit is as figure 1 As shown, wherein: N1 is a diode with a P+ / N-Well / P-sub structure, and its P+ terminal is electrically connected to the control signal; M1 is a source follower transistor, and its base is electrically connected to the P+ / N-Well / P - a sub diode, the emitter is electrically connected to the bias current through the column readout bus, and the collector is electrically connected to the bias volt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a CMOS (complementary metal oxide semiconductor) image sensor pixel unit with a high filling factor and a pixel array work method thereof. The pixel unit comprises that: a diode (N1) with a P+ / N-Well / P-sub structure, wherein, a P+ terminal is electrically connected with a control signal; a source electrode follower transistor (M1), wherein, an emitter connects with a read bus. The corresponding pixel array work method comprises the following steps: (1) clearing: in operation, applying a negative voltage on all pixel units and clearing an internal node charge; (2) resetting: applying high positive voltage to a specified pixel column so as to activate the N1 to charge a node; (3) reading: setting a control signal to zero, and after fixed light integration time, reading out a light sensation signal through the M1; (4) zero setting: after a reading out operation, applying a control signal of the high negative voltage, enabling M1 to be failed, and discharging a charge of a sensor node to zero through a junction capacitor of the N1; (5) ending: setting the control signal to zero, and cutting pixel unit output off until next resetting.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a high filling factor complementary metal oxide semiconductor (CMOS) image sensor pixel unit and a working method thereof. Background technique [0002] Image sensing technology has penetrated into the life of modern people, such as: photography, photography and so on. The CMOS image sensor (CIS) has gradually replaced the charge-coupled device (CCD) image sensor based on its own advantages of low cost, low power consumption, and high integration capability. The characteristics of CIS are mainly determined by resolution, fill factor, dark current, temporal noise, fixed pattern noise, sensitivity, responsivity, quantum efficiency, dynamic range, and signal-to-noise ratio. With the increase of integration density and complexity of today's integrated circuits, reducing the pixel unit size has become the main driving force for the development and competition of CIS, but ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/3745H04N5/378
Inventor 何进苏艳梅张东维
Owner PKU HKUST SHENZHEN HONGKONG INSTITUTION